Epitaxial graphene transistors on SiC substrates

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 2078-2085

  Kedzierski, Jakub ^a   Hsu, Pei Lan ^a   Healey, Paul ^a   Wyatt, Peter W ^a   Keast, Craig L ^a   Sprinkle, Mike ^b   Berger, Claire ^b,c   de Heer, Walt A ^b  

^a MIT LINCOLN LABORATORY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c CNRS   (France)

Author keywords

Carbon devices; Carbon transistors; Epitaxial graphene; Graphene; Graphene devices; Graphene transistors; HfO2 dielectric; High mobility; High k dielectric; Semimetal; SiC; Thin film transistors

Indexed keywords

MICROELECTRONICS; NONMETALS; OPTICAL DESIGN; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE; STANDARDS;

ACTIVE MATERIALS; CARBON DEVICES; CARBON TRANSISTORS; EPITAXIAL GRAPHENE; GRAPHENE; GRAPHENE DEVICES; GRAPHENE TRANSISTORS; HFO2 DIELECTRIC; HIGH MOBILITY; HIGH-K DIELECTRIC; HIGH-K DIELECTRICS; SEMIMETAL; SIC; SIC SUBSTRATES; SILICON CARBIDE DEVICES; SYSTEMATIC EVALUATION; THIN-FILM TRANSISTORS;

TRANSISTORS;

EID: 48649091358     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926593     Document Type: Article

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