Radiation induced charge trapping in ultrathin HfO 2-based MOSFETs

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 1883-1890

  Dixit, Sriram K ^a,b   Zhou, Xing J ^a,b   Schrimpf, Ronald D ^a,b   Fleetwood, Daniel M ^a,b   Pantelides, Sokrates T ^a,c   Choi, Rino ^a,d   Bersuker, Gennadi ^a,d   Feldman, Leonard C ^a,c  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d SEMATECH   (United States)

Author keywords

Constant voltage stress (CVS); Hafnium oxide (HfO 2); High ; Metal oxide semiconductor field effect transistors (MOSFETs); Radiation damage; Recovery; Ultrathin; X ray

Indexed keywords

DIELECTRIC THICKNESS; IRRADIATION BIAS; THICKNESS DEPENDENCE; VOLTAGE STRESS;

CAPACITORS; CHARGE TRAPPING; DIELECTRIC FILMS; GATE DIELECTRICS; HAFNIUM COMPOUNDS; RADIATION EFFECTS; ULTRATHIN FILMS;

MOSFET DEVICES;

EID: 37349089827     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.911423     Document Type: Conference Paper

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