Carbon nanotube electronics

Proceedings of the IEEE

Volumn 91, Issue 11, 2003, Pages 1772-1783

  Avouris, Phaedon ^a   Appenzeller, Joerg ^a   Martel, Richard ^a   Wind, Shalom J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Carbon nanotubes (CNTs); Field effect transistors (FETs); Molecular electronics; Nanoelectronics

Indexed keywords

ELECTRONIC EQUIPMENT; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; LOGIC GATES; NANOTECHNOLOGY; SWITCHING; TRANSPORT PROPERTIES;

METAL CATALYSTS; MOLECULAR ELECTRONICS; NANOELECTRONICS; SCHOTTKY BARRIERS;

CARBON NANOTUBES;

EID: 2642514143     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2003.818338     Document Type: Conference Paper

References (53)

1. S. Iijima, "Helical microtubules of graphitic carbon," Nature, vol. 354, pp. 56-58, 1991.
2. S. Iijima and T. Ichihashi, "Single-shell carbon nanotubes of 1 nm diameter," Nature, vol. 363, pp. 603-405,1993.
3. D. S. Bethune, C. H. Kiang, M. S. Devries, G. Gorman, R. Savoy, I. Vaszquez, and R. Severe, "Cobalt-catalyzed growth of carbon nanotubes with single atomic layer walls," Nature, vol. 363, pp. 605-607, 1993.
4. M. S. Dresselhous, G. Dresselhaus, und P. Avouris, Eds., Carbon Nanotubes: Synthesis, Structure Properties and Applications. Berlin, Germany: Springer-Verlag, 2001.
5. P. L. McEuen, M. S. Fuhrer, and H. Park, "Single-walled carbon nanutube electronics," IEEE Trans. Nanotechnol. vol. 1, pp. 78-85, Mar. 2002.
6. C. Dekker, "Carbon nanotubes as molecular quantum wires," Phys. Today, vol. 52, p. 22, 1999.
7. P. G. Collins and P. Avouris, "Nanotubes for electronics," Sci. Amer., vol. 283, pp. 38-45, 2000.
8. 00 and their symmetry," Phys. Rev. B, vol. 45, pp. 6234-6242, 1992.
9. J. W. Mintmire, B. I. Dunlap, and C. T. White, "Are fullerene tubules metallic?," Phys. Rev. Lett., vol. 68, pp. 631-634, 1992.
10. S. Frank, P. Poncharal, Z. L. Wang, and W. A. deHeer, "Carbon nanotube quantum resistors," Science, vol. 280, pp. 1744-1746, 1998.
11. M. Ouyang, J.-L. Huang, C. L. Cheung, and C. M. Lieber, "Energy gaps in 'metallic' single-walled carbon nanotubes," Science, vol. 292, pp. 702-705, 2001.
12. J. W. Wildoer, L. C. Venema, A. G. Rinzler, R. E. Smalley, and C. Dekker, "Electronic .structure of atomically' solved carbon nanotubes," Nature, vol. 391, pp, 59-62, 2001.
13. T. W. Odom, J. L. Huang, P. Kim, and C. M. Lieber, "Atomic structure and electronic properties of single-walled nanotubes," Nature, vol. 391, pp, 62-64, 2001.
14. Y. Imry and R. Landauer, "Conductance viewed as transmission," Rev. Mod. Phys., vol. 71, pp. S306-S312, 1999.
15. S. Data, Electronic Transport in Mesoscopic Systems. Cambridge, U.K.: Cambridge Univ. Press, 1995.
16. P. L. McEuen, M. Bockrath, D. H. Cobden, Y.-G. Yoon, and S. G. Louie, "Disorder, pseudospins, and backscattering in carbon nanotubes," Phys. Rev. Lett., vol. 83, pp. 5098-5101, 1999.
17. L. Wenjie, M. Bockrath, D. Bozovic, J. H. Hafner, M. Tinkman, and P. Hongkum, "Fabry-Perot interference in a nanotube electron waveguide," Nature, vol. 411, pp. 665-669, 2001.
18. J. Kong, E. Yenilmez, T. W. Tombler, W. Kim, H. Dai, R. B. Laughlin, L. Liu, C. S. Jayanthi, and S. Y. Wu, "Quantum interference and ballistic transmission in nanotube electron waveguides," Phys. Rev. Lett., vol. 87, pp. 106801/1-10689 1/4, 2001.
19. J. Appenzeller,R. Martel, P. Avouris, H. Stuhl, and B. Lengelcr, "Optimized contact configuration for the study of transport phenomena in ropes of single-wall carbon nanotubes," Appl. Phys. Lett., vol. 78, pp. 3313-3315, 2001,
20. P. G. Collins, M. S. Arnold, and P. Avouris, "Engineering carbon nanotubes using electrical breakdown," Science, vol. 292, pp. 706-709, 2001.
21. P. G. Collins and P. Avouris, "Multishell conduction in multiwalled carbon nanotubes," Appl. Phys. A, vol. 74, pp. 329-332, 2002.
22. A. Bachtold et al., "Aharonov Bohm oscillations in carbon nanotubes," Nature, vol. 397, pp. 673-675, 1999.
23. C. Schoenenberger, A. Bachtold, C. Strunk, J.-P. Salvetat, and L. Form, "Interference and interactions in multi wall carbon nanotubes," Appl. Phys. A, vol. 69, pp. 283-295, 1999.
24. S. Tans, S. Verschueren, and C. Dekker, "Room-temperature transistor bused on single carbon nanotube," Nature, vol. 393, pp. 49-52, 1998.
25. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and P. Avouris, "Single and multi-wall carbon nunotube field-effect transistors," Appl. Phys., Lett., vol. 73, pp. 2447-2449, 1998.
26. R. Martel, H.-S. P. Wong, K. Chan, und P. Avouris, "Carbon nanotube field-effect transistors for logic applications," in Proc. IEDM 2001, 2001, pp. 159-16).
27. R. Martel, V. Derycke, C. Lavoie, J. Appenuller, K. Chen, J. Tersoff, and P. Avouris, "Ambipolar electrical transport in semiconducting single-wall carbon nanotubes," Phys. Rev. Lett., vol. 87, pp. 256 805/1-256 805/4, 2001.
28. S. Wind, J. Appenzeller, R. Martel, V. Derycke, and P. Avouris, "Vertical scaling of single-wall carbon nanotubes transistors using top gate electrodes," Appl. Phys. Lett., vol. 80, p. 3817, 2002.
29. B. Yu, H. Wang, A. Joshi, Q. Xiang, E. Ibok, and M.-R. Lin, "15 nm gate length planar CMOS transistor," in Proc. IEDM 2001, pp. 937-939.
30. R. Chau et al., "A 50 nm depicted-substrate CMOS transistor," in Proc. IEDM 2001, pp. 45-48.
31. J. Guo, S. Goasquen, M. Lundstrom. and S. Datta, "Metal- insulatorsemiconductor electrostatics of carbon nanotubes," Appl. Phys. Lett., vol. 81, pp. 1486-1488, 2002.
32. J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and P. Avouris, "Field-modulated carrier transport in carbon nanotube transistors," Phys. Rev. Lett., vol. 89, pp. 126801/1-126801/4, 2002.
33. S. Rosenblatt, Y. Yaish, I. Park, J. Cure, und P. L. McEuen, "High performance electrolyte gated carbon nanotube transistor," Nano Lett., vol. 2, pp. 869-872, 2002.
34. A. Thess, R. Lee, P. Nikolaev, H. Dai, P. Petit, J. Robert, X. Chunhui, L. Young Hee, K. Seong Gon, A. G. Rinzler, and D. T. Colbert et al., "Crystalline ropes of metallic carbon nanotubes," Science, vol. 273, pp. 483-487, 1996.
35. A. Z. Yuo, C. L. Kune, und C. Dekker, "High field electrical transport in singlc-wull carbon nanotubes," Phys. Rev. Lett., vol. 61, pp. 2941-2944, 2000.
36. P. G. Collins, M. Hersam, M. Arnold, R. Martel, and P. Avouris, "Current saturation und electrical breakdown in multi-walled carbon nunotubes," Phys. Rev. Lett., vol. 86, pp. 3128-3131, 2001.
37. S. M. Sze, Physics of Semiconducting Devices. New York: Wiley, 1981.
38. F. Leonard and J. Tersoff, "Novel length scales in nanotube devices," Phys. Rev. Lett., vol. 84, pp. 4693-4696, 2000,
39. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzller, and P. Avouris, "Carbon nanotubes as Schottky barrier transistors," Phys. Rev. Lett., vol. 89, pp, 106801/1-106801/4, 2002.
40. P. G. Collins, K. Bradley, M. Tshigami, and A. Zettl, "Extreme oxygen sensitivity of electronic properties of carbon nanoiubes," Science, vol. 287, p. 1801, 2000.
41. S.-H. Jhi, S. G. Louie, and M. L. Cohen, "Electronic properties of oxidized carbon nanotubes," Phys. Rev. Lett., vol. 85, pp. 1710-1713, 2000.
42. V. Derycke, R. Martel, J. Appenzeller, and P. Avouris, "Controlling doping and carrier injection in carbon nanotube transistors," Appl. Phys. Lett., vol. 80, pp. 2773-2775, 2002.
43. N. D. Lang and P. Avouris, "Effects of coadsorption on the conductance of molecular wires," Nano Lett., vol. 2, pp, 1047-1050, 2002.
44. S. M. Lee, Y. H. Lee, Y. G. Hwang, J. R. Hahn, and H. Kang, Phys. Rev. Lett., vol. 82, pp. 217-220, 1999.
45. V. Derycke, R. Martel, J. Appenzeller, and P. Avouris, "Carbon nanotube inter- and intra-molecular logic gates," Nano Lett., vol. 1, pp. 453-456, 2001.
46. A. Javey, Q. Wang, A. Urai, Y. Li, and H. Dai, "Carbon nanotube transistor arrays for multi-stage complementary logic and ring oscillators," Nano Lett., vol. 2, pp. 929-932, 2002.
47. A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, "Logic circuits with carbon nanotube transistors," Science, vol. 294, pp. 1317-1320. 2001.
48. N. Franklin and H. Dai, "An enhanced CVD approach to extensive nanotube networks with directionality," Adv. Mater., vol. 12, pp. 890-894, 2000.
49. A. Cassel, N. Franklin, T. Tbmbler, E. Chan, J. Han, and H. Dai, "Current directed growth of free-standing single-walled carbon nanotubes," J. Amer. Chem. Soc., vol. 121, pp. 7975-7976, 1999.
50. Y. Zhang, A. Chang, J. Cao, Q. Wang, W. Kim, Y. Li, N. Morris, E. Yenilmne, J. Kong, and H. Dai, "Electric-field-directed growth of aligned single-walled carbon nanotubes," Appl. Phys. Lett., vol. 79, pp. 3155-3157, 2001.
51. V. Derycke, R. Martel, M. Radosavljevic, F. M. Ross, and P. Avouris, "Catalyst-free growth of ordered single-walled carbon nanotube networks," Nano Lett., vol. 2, pp. 1043-1046, 2002.
52. J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and P. Avouris, "Short-channel like effects in Schottky barrier carbon nanotube field-effect transistors," in Proc. IEDM 2002, pp. 285-288.
53. M. Radosavljevic, S. Heinze, J. Tersoff, and P. Avouris, "Drain voltage scaling in carbon nanotubes," Appl. Phys. Lett., vol. 83, pp. 2435-2437, 2003.