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Volumn 55, Issue 4, 2008, Pages 1903-1925

Improving integrated circuit performance through the application of hardness-by-design methodology

Author keywords

Hardness by design (HBD); Multibit upsets; Single event latchup; Single event transient; Single event upset; Total ionizing dose radiation

Indexed keywords

FOUNDRIES; FOUNDRY PRACTICE; HARDENING; HARDNESS; INTEGRATED CIRCUITS;

EID: 53349176939     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2000480     Document Type: Conference Paper
Times cited : (136)

References (78)
  • 2
    • 0005962537 scopus 로고
    • Approaches to scaling
    • N. G. Einspruch and G. Gildenblat, Eds. Dordrecth, The Netherlands: Academic, ch. 1
    • P. K. Ko, "Approaches to scaling," in Advances in CMOS Device Physics, N. G. Einspruch and G. Gildenblat, Eds. Dordrecth, The Netherlands: Academic, 1989, ch. 1.
    • (1989) Advances in CMOS Device Physics
    • Ko, P.K.1
  • 3
    • 0034450465 scopus 로고    scopus 로고
    • Application of hardness-by-design methodology to radiation-tolerant ASIC technologies
    • Dec
    • R. C. Lacoe, J. V. Osborn, R. Koga, S. Brown, and D. C. Mayer, "Application of hardness-by-design methodology to radiation-tolerant ASIC technologies," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pt. 3, pp. 2334-2341, Dec. 2000.
    • (2000) IEEE Trans. Nucl. Sci , vol.47 , Issue.6 PART. 3 , pp. 2334-2341
    • Lacoe, R.C.1    Osborn, J.V.2    Koga, R.3    Brown, S.4    Mayer, D.C.5
  • 8
    • 53349150147 scopus 로고    scopus 로고
    • Improving system performance through the application of hardness-by-design methodology
    • R. C. Lacoe, "Improving system performance through the application of hardness-by-design methodology," in 2007 RADECS Short Course, 2003.
    • (2003) 2007 RADECS Short Course
    • Lacoe, R.C.1
  • 9
    • 0017924811 scopus 로고    scopus 로고
    • High electric field properties of SiO2
    • R. C. Hughes, "High electric field properties of SiO2," Sol. State Elec., vol. 21, pp. 251-1978.
    • Sol. State Elec , vol.21 , pp. 251-1978
    • Hughes, R.C.1
  • 11
    • 0000947294 scopus 로고    scopus 로고
    • F. B. McLean and G. A. Ausmandl, Jr., Simple approximate solutions to continuous-time random-walk transport, Phys. Rev. B, 15, no. 2, pp. 1052-1061, Jan. 1977.
    • F. B. McLean and G. A. Ausmandl, Jr., "Simple approximate solutions to continuous-time random-walk transport," Phys. Rev. B, vol. 15, no. 2, pp. 1052-1061, Jan. 1977.
  • 12
    • 0025669259 scopus 로고
    • Modeling the anneal of radiation-induced trapped holes in a varying thermal environment
    • Dec
    • P. J. McWhorter, S. L. Miller, and W. M. Miller, "Modeling the anneal of radiation-induced trapped holes in a varying thermal environment," IEEE Trans. Nucl. Sci., vol. 37, no. 6, pp. 1682-1689, Dec. 1990.
    • (1990) IEEE Trans. Nucl. Sci , vol.37 , Issue.6 , pp. 1682-1689
    • McWhorter, P.J.1    Miller, S.L.2    Miller, W.M.3
  • 13
  • 14
    • 0032095217 scopus 로고    scopus 로고
    • Total dose hardness of three commercial CMOS microelectronic foundries
    • Jun
    • J. V. Osborn, R. C. Lacoe, D. C. Mayer, and G. Yabiku, "Total dose hardness of three commercial CMOS microelectronic foundries," IEEE Trans. Nucl. Sci., vol. 45, no. 3, pp. 1458-1463, Jun. 1998.
    • (1998) IEEE Trans. Nucl. Sci , vol.45 , Issue.3 , pp. 1458-1463
    • Osborn, J.V.1    Lacoe, R.C.2    Mayer, D.C.3    Yabiku, G.4
  • 16
    • 53349084854 scopus 로고    scopus 로고
    • Performance impact of radiation-hardness-by-design,
    • presented at the, Albuquerque, NM, Jul
    • R. C. Lacoe, "Performance impact of radiation-hardness-by-design, " presented at the 2001 Hardness-by-Design Workshop, Albuquerque, NM, Jul. 2001.
    • (2001) 2001 Hardness-by-Design Workshop
    • Lacoe, R.C.1
  • 18
    • 0036508201 scopus 로고    scopus 로고
    • CMOS design near the limit of scaling
    • D.J. Frank, "CMOS design near the limit of scaling," IBM J. Res. Develop., vol. 46, pp. 213-222, 2002.
    • (2002) IBM J. Res. Develop , vol.46 , pp. 213-222
    • Frank, D.J.1
  • 19
    • 0346534582 scopus 로고    scopus 로고
    • Hafnium and Zirconium slicates for advanced gate dielectrics
    • G. D. Wilk, R. M. Wallace, and J. M. Anthony, "Hafnium and Zirconium slicates for advanced gate dielectrics," J. Appl. Phys., vol. 87, pp. 484-492, 2000.
    • (2000) J. Appl. Phys , vol.87 , pp. 484-492
    • Wilk, G.D.1    Wallace, R.M.2    Anthony, J.M.3
  • 20
    • 0035872897 scopus 로고    scopus 로고
    • High-k gate dielectrics : Current status and materials properties considerations
    • G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High-k gate dielectrics : Current status and materials properties considerations," J. Appl. Phys., vol. 89, pp. 5243-5275, 2001.
    • (2001) J. Appl. Phys , vol.89 , pp. 5243-5275
    • Wilk, G.D.1    Wallace, R.M.2    Anthony, J.M.3
  • 21
    • 0033307321 scopus 로고    scopus 로고
    • Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application
    • B. H. Lee, L. Kang, W. J. Qi, R. Nieh, Y. Jeon, K. Onishi, and J. C. Lee, "Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application," in IEEE IEDM Tech. Dig., 1999, pp. 133-135.
    • (1999) IEEE IEDM Tech. Dig , pp. 133-135
    • Lee, B.H.1    Kang, L.2    Qi, W.J.3    Nieh, R.4    Jeon, Y.5    Onishi, K.6    Lee, J.C.7
  • 25
    • 0033342341 scopus 로고    scopus 로고
    • R. C. Lacoe, J. V. Osborn, D. C. Mayer, S. Brown, and D. R. Hunt, Total dose radiation tolerance of a chartered 0.35-μm CMOS process, in 7999 IEEE Radiation Effects Data Workshop Record, 1999, pp. 82-86.
    • R. C. Lacoe, J. V. Osborn, D. C. Mayer, S. Brown, and D. R. Hunt, "Total dose radiation tolerance of a chartered 0.35-μm CMOS process," in 7999 IEEE Radiation Effects Data Workshop Record, 1999, pp. 82-86.
  • 26
    • 53349123305 scopus 로고    scopus 로고
    • New results from the DARPA hardness-by-design program-Boeing
    • presented at the, Manhattan Beach, CA, unpublished
    • W. Snapp, "New results from the DARPA hardness-by-design program-Boeing," presented at the Microelectronic Reliability Qualification Workshop, Manhattan Beach, CA, 2005, unpublished.
    • (2005) Microelectronic Reliability Qualification Workshop
    • Snapp, W.1
  • 27
    • 33144457628 scopus 로고    scopus 로고
    • Radiation-induced edge effects in deep submicron CMOS transistors
    • Dec
    • F. Faceio and G. Cervelli, "Radiation-induced edge effects in deep submicron CMOS transistors," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pt. 1, pp. 2413-2420, Dec. 2005.
    • (2005) IEEE Trans. Nucl. Sci , vol.52 , Issue.6 PART. 1 , pp. 2413-2420
    • Faceio, F.1    Cervelli, G.2
  • 29
    • 8444252998 scopus 로고    scopus 로고
    • A total-dose hardening-by-design approach for high-speed mixed-signal CMOS integrated circuits
    • N. Nowlin, J. Bailey, B. Turner, and D. Alexander, "A total-dose hardening-by-design approach for high-speed mixed-signal CMOS integrated circuits," Int. J. High Speed Elec. Syst., vol. 14, pp. 367-378, 2004.
    • (2004) Int. J. High Speed Elec. Syst , vol.14 , pp. 367-378
    • Nowlin, N.1    Bailey, J.2    Turner, B.3    Alexander, D.4
  • 30
    • 53349084852 scopus 로고    scopus 로고
    • Enhanced reliability in commercial CMOS processes by the application of hardness-by-design techniques
    • presented at the, Dec. 2002 [Online, Available
    • D. C. Mayer and R. C. Lacoe, "Enhanced reliability in commercial CMOS processes by the application of hardness-by-design techniques," presented at the 2002 Micro, Elec. Rel. Qual. Workshop, Manhattan Beach, CA, Dec. 2002 [Online]. Available: http://www.aero.org/conferences/mrqw/2002papers/ B_Mayer.pdf
    • 2002 Micro, Elec. Rel. Qual. Workshop, Manhattan Beach, CA
    • Mayer, D.C.1    Lacoe, R.C.2
  • 31
    • 33144470419 scopus 로고    scopus 로고
    • A new total-dose-induced parasitic effect in enclosed-geometty transistors
    • Dec
    • R. N. Nowlin, S. R. McEndree, A. L. Wilson, and D. R. Alexander, "A new total-dose-induced parasitic effect in enclosed-geometty transistors," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pt. 1, pp. 2495-2502, Dec. 2005.
    • (2005) IEEE Trans. Nucl. Sci , vol.52 , Issue.6 PART. 1 , pp. 2495-2502
    • Nowlin, R.N.1    McEndree, S.R.2    Wilson, A.L.3    Alexander, D.R.4
  • 32
    • 53349084854 scopus 로고    scopus 로고
    • Performance impact of radiation-hardness-by-design,
    • presented at the, Albuquerque, NM, Jul
    • R. C. Lacoe, "Performance impact of radiation-hardness-by-design, " presented at the 2001 Hardness-by-Design Workshop, Albuquerque, NM, Jul. 2001.
    • (2001) 2001 Hardness-by-Design Workshop
    • Lacoe, R.C.1
  • 33
    • 0018331014 scopus 로고
    • Alpha-particle induced soft errors in dynamic memories
    • Jan
    • T. C. May and M. H. Woods, "Alpha-particle induced soft errors in dynamic memories," IEEE Trans. Elec. Dev., vol. ED-26, no. 1, pp. 2-9, Jan. 1979.
    • (1979) IEEE Trans. Elec. Dev , vol.ED-26 , Issue.1 , pp. 2-9
    • May, T.C.1    Woods, M.H.2
  • 34
    • 33746325008 scopus 로고    scopus 로고
    • Single event transient phenomena - Challenges and solutions
    • Online, Available
    • D. Mavis, "Single event transient phenomena - Challenges and solutions," in Proc. Microelectronic Reliability Qualification Workshop, 2002 [Online]. Available: http://www.aero.org/conferences/mrqw/ 2002-papers/A_Mavis.pdf
    • (2002) Proc. Microelectronic Reliability Qualification Workshop
    • Mavis, D.1
  • 36
    • 0020312672 scopus 로고
    • Charge funneling in n and p-type Si substrates
    • F. B. McLean and T. R. Oldham, "Charge funneling in n and p-type Si substrates," IEEE Trans. Nucl. Sci., vol. 38, pp. 2018-2023, 1982.
    • (1982) IEEE Trans. Nucl. Sci , vol.38 , pp. 2018-2023
    • McLean, F.B.1    Oldham, T.R.2
  • 37
    • 0026137972 scopus 로고
    • A simple estimate of funneling-assisted charge collection
    • Apr
    • L. D. Edmonds, "A simple estimate of funneling-assisted charge collection," IEEE Trans. Nucl. Sci., vol. 38, no. 2, pt. 1-2, pp. 828-833, Apr. 1991.
    • (1991) IEEE Trans. Nucl. Sci , vol.38 , Issue.2 PART. 1-2 , pp. 828-833
    • Edmonds, L.D.1
  • 38
    • 0020765547 scopus 로고
    • Collection of charge from alpha-particle tracks in silicon devices
    • Jun
    • C. M. Hsieh, P. C. Murley, and R. R. O'Brien, "Collection of charge from alpha-particle tracks in silicon devices," IEEE Trans. Elec. Dev., vol. 30, no. 6, pp. 686-693, Jun. 1983.
    • (1983) IEEE Trans. Elec. Dev , vol.30 , Issue.6 , pp. 686-693
    • Hsieh, C.M.1    Murley, P.C.2    O'Brien, R.R.3
  • 39
    • 0028697670 scopus 로고
    • Three-dimensional simulation of charge collection and multiple-bit upset in Si devices
    • Dec
    • P. E. Dodd, F. W. Sexton, and P. S. Winokur, "Three-dimensional simulation of charge collection and multiple-bit upset in Si devices," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pt. 1, pp. 2005-2017, Dec. 1994.
    • (1994) IEEE Trans. Nucl. Sci , vol.41 , Issue.6 PART. 1 , pp. 2005-2017
    • Dodd, P.E.1    Sexton, F.W.2    Winokur, P.S.3
  • 40
    • 53349088971 scopus 로고    scopus 로고
    • P. E. Dodd, Basic-mechanisms for single-event effects, in 7999 IEEE Nuclear and Radiation Effects Conf. Short Course, 1999.
    • P. E. Dodd, "Basic-mechanisms for single-event effects," in 7999 IEEE Nuclear and Radiation Effects Conf. Short Course, 1999.
  • 42
    • 0031167885 scopus 로고    scopus 로고
    • Charge collection from ion tracks in simple EPI diodes
    • Jun
    • L. D. Edmonds, "Charge collection from ion tracks in simple EPI diodes," IEEE Trans. Nucl. Sci., vol. 44, no. 3, pt. 3, pp. 1448-1463, Jun. 1997.
    • (1997) IEEE Trans. Nucl. Sci , vol.44 , Issue.3 PART. 3 , pp. 1448-1463
    • Edmonds, L.D.1
  • 43
    • 0032316431 scopus 로고    scopus 로고
    • Electric currents through ion tracks in silicon devices
    • Dec
    • L. D. Edmonds, "Electric currents through ion tracks in silicon devices," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pt. 3, pp. 3153-3164, Dec. 1998.
    • (1998) IEEE Trans. Nucl. Sci , vol.45 , Issue.6 PART. 3 , pp. 3153-3164
    • Edmonds, L.D.1
  • 44
    • 53349157398 scopus 로고    scopus 로고
    • Soft errors in commercial semiconductor technology: Who should be worried and what can we do about it?
    • presented at the, Manhattan Beach, CA, Apr, unpublished
    • R. Baumann, "Soft errors in commercial semiconductor technology: Who should be worried and what can we do about it?," presented at the 2002 SEE Symp., Manhattan Beach, CA, Apr. 2002, unpublished.
    • (2002) 2002 SEE Symp
    • Baumann, R.1
  • 45
    • 33144469974 scopus 로고    scopus 로고
    • SEU hardening techniques for retargetable, scalable, sub-micron digital circuits and libraries
    • presented at the, Manhattan Beach, CA, Apr
    • M. P. Baze, J. C. Killens, R. A. Paup, and W. P. Snapp, "SEU hardening techniques for retargetable, scalable, sub-micron digital circuits and libraries," presented at the 2002 SEE Symp., Manhattan Beach, CA, Apr. 2002.
    • (2002) 2002 SEE Symp
    • Baze, M.P.1    Killens, J.C.2    Paup, R.A.3    Snapp, W.P.4
  • 47
    • 0030375853 scopus 로고    scopus 로고
    • Upset hardened memory design for submicron CMOS technology
    • Dec
    • T. Calin, M. Nicolaidis, and R. Velazco, "Upset hardened memory design for submicron CMOS technology," IEEE. Trans. Nucl. Sci., vol. 43, no. 6, pt. 1, pp. 2874-2878, Dec. 1996.
    • (1996) IEEE. Trans. Nucl. Sci , vol.43 , Issue.6 PART. 1 , pp. 2874-2878
    • Calin, T.1    Nicolaidis, M.2    Velazco, R.3
  • 49
    • 53349134988 scopus 로고    scopus 로고
    • W. F. Heidergott, System level mitigation strategies, in 7999 IEEE Nuclear and Radiation Effects Conf. Short Course, 1999.
    • W. F. Heidergott, "System level mitigation strategies," in 7999 IEEE Nuclear and Radiation Effects Conf. Short Course, 1999.
  • 51
    • 21644463896 scopus 로고    scopus 로고
    • Compreshensive study of soft errors in advanced CMOS circuits with 90/130 nm technology
    • Y. Tosaka, H. Ehara, M. Igeta, T. Uemura, H. Oka, N. Matsuoka, and K. Hatanaka, "Compreshensive study of soft errors in advanced CMOS circuits with 90/130 nm technology," in Proc. IEDM, 2004, pp. 941-944.
    • (2004) Proc. IEDM , pp. 941-944
    • Tosaka, Y.1    Ehara, H.2    Igeta, M.3    Uemura, T.4    Oka, H.5    Matsuoka, N.6    Hatanaka, K.7
  • 52
    • 33144478471 scopus 로고    scopus 로고
    • Radiation-induced Multi-bit-upsets in SRAM-based FPGAs
    • Dec
    • H. Quinn, P. Graham, J. Krone, M. Caffrey, and S. Rezgui, "Radiation-induced Multi-bit-upsets in SRAM-based FPGAs," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pt. 1, pp. 2455-2461, Dec. 2005.
    • (2005) IEEE Trans. Nucl. Sci , vol.52 , Issue.6 PART. 1 , pp. 2455-2461
    • Quinn, H.1    Graham, P.2    Krone, J.3    Caffrey, M.4    Rezgui, S.5
  • 53
    • 0035722922 scopus 로고    scopus 로고
    • Simulations of nucleon-induced nuclear reactions in a simplified SRAM structure: Scaling effects on SEU and MBU cross-sections
    • Dec
    • F. Wrobel, J. M. Palau, M. C. Calvert, O. Bersilon, and H. Duarte, "Simulations of nucleon-induced nuclear reactions in a simplified SRAM structure: Scaling effects on SEU and MBU cross-sections," IEEE Trans. Nucl. Sci., vol. 48, no. 6, pt. 1, pp. 1946-1952, Dec. 2001.
    • (2001) IEEE Trans. Nucl. Sci , vol.48 , Issue.6 PART. 1 , pp. 1946-1952
    • Wrobel, F.1    Palau, J.M.2    Calvert, M.C.3    Bersilon, O.4    Duarte, H.5
  • 54
    • 0022102930 scopus 로고
    • Memory SEU simulations using 2-D transport calculations
    • Aug
    • J. S. Fu, C. L. Axness, and H. T. Weaver, "Memory SEU simulations using 2-D transport calculations," IEEE Elec. Dev. Lett., vol. 6, no. 8, pp. 422-424, Aug. 1985.
    • (1985) IEEE Elec. Dev. Lett , vol.6 , Issue.8 , pp. 422-424
    • Fu, J.S.1    Axness, C.L.2    Weaver, H.T.3
  • 55
    • 0027850536 scopus 로고
    • Three-dimensional numerical simulation of SEU of an SRAM cell
    • Dec
    • R. L. Woodruff and P. J. Rudeck, "Three-dimensional numerical simulation of SEU of an SRAM cell," IEEE Trans. Nucl. Sci., vol. 40, no. 6, pt. 1-2, pp. 1795-1803, Dec. 1993.
    • (1993) IEEE Trans. Nucl. Sci , vol.40 , Issue.6 PART. 1-2 , pp. 1795-1803
    • Woodruff, R.L.1    Rudeck, P.J.2
  • 65
    • 0036082034 scopus 로고    scopus 로고
    • Soft error rate mitigation techniques for modern microcircuits
    • D. G. Mavis and P. H. Eaton, "Soft error rate mitigation techniques for modern microcircuits," in Proc. 2002 Int. Rel. Phys. Symp., 2002, pp. 216-225.
    • (2002) Proc. 2002 Int. Rel. Phys. Symp , pp. 216-225
    • Mavis, D.G.1    Eaton, P.H.2
  • 66
    • 0031373956 scopus 로고    scopus 로고
    • Attenuation of singel event induced pulses in CMOS combinatorial logic
    • Dec
    • M. P. Baze and S. P. Buchner, "Attenuation of singel event induced pulses in CMOS combinatorial logic," IEEE. Trans. Nucl. Sci., vol. 44, no. 6, pt. 1, pp. 2217-2223, Dec. 1997.
    • (1997) IEEE. Trans. Nucl. Sci , vol.44 , Issue.6 PART. 1 , pp. 2217-2223
    • Baze, M.P.1    Buchner, S.P.2
  • 68
    • 0036082034 scopus 로고    scopus 로고
    • Soft error rate mitigation techniques for modern microcircuits
    • D. G. Mavis and P. H. Eaton, "Soft error rate mitigation techniques for modern microcircuits," in Proc. 2002 Int. Rel. Phys. Symp., 2007.
    • (2007) Proc. 2002 Int. Rel. Phys. Symp
    • Mavis, D.G.1    Eaton, P.H.2
  • 69
    • 11044223633 scopus 로고    scopus 로고
    • Single event transient pulsewidth measurements using a variable temporal latch technique
    • Dec
    • P. Eaton, J. Benedetto, D. Mavis, K. Avery, M. Sibley, M. Gadlage, and T. Turflinger, "Single event transient pulsewidth measurements using a variable temporal latch technique," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3365-3368, Dec. 2004.
    • (2004) IEEE Trans. Nucl. Sci , vol.51 , Issue.6 , pp. 3365-3368
    • Eaton, P.1    Benedetto, J.2    Mavis, D.3    Avery, K.4    Sibley, M.5    Gadlage, M.6    Turflinger, T.7
  • 71
    • 33144460955 scopus 로고    scopus 로고
    • RHBD techniques for mitigating effects of single-event hits using guard-gates
    • Dec
    • A. Balasubramanian, B. L. Bhuva, J. D. Black, and L. W. Massengill, "RHBD techniques for mitigating effects of single-event hits using guard-gates," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2531-2535, Dec. 2005.
    • (2005) IEEE Trans. Nucl. Sci , vol.52 , Issue.6 , pp. 2531-2535
    • Balasubramanian, A.1    Bhuva, B.L.2    Black, J.D.3    Massengill, L.W.4
  • 72
    • 33144477380 scopus 로고    scopus 로고
    • Variation of digital SET pulse widths and the implications for single event hardening of advanced CMOS processes
    • Dec
    • J. M. Benedetto, P. H. Eaton, D. G. Mavis, M. Gadlage, and T. Turflinger, "Variation of digital SET pulse widths and the implications for single event hardening of advanced CMOS processes," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2114-2119, Dec. 2005.
    • (2005) IEEE Trans. Nucl. Sci , vol.52 , Issue.6 , pp. 2114-2119
    • Benedetto, J.M.1    Eaton, P.H.2    Mavis, D.G.3    Gadlage, M.4    Turflinger, T.5
  • 73
    • 53349094154 scopus 로고    scopus 로고
    • Hardened by design cell library issues
    • presented at the, Albuquerque, NM, Jul
    • D. R. Alexander, "Hardened by design cell library issues," presented at the 2001 Hardness-by-Design Workshop, Albuquerque, NM, Jul. 2001.
    • (2001) 2001 Hardness-by-Design Workshop
    • Alexander, D.R.1
  • 74
    • 0036956113 scopus 로고    scopus 로고
    • Latent damage in CMOS devices from single-event latchup
    • Dec
    • H. N. Becker, T. F. Miyahira, and A. H. Johnston, "Latent damage in CMOS devices from single-event latchup," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 2923-2929, Dec. 2002.
    • (2002) IEEE Trans. Nucl. Sci , vol.49 , Issue.6 , pp. 2923-2929
    • Becker, H.N.1    Miyahira, T.F.2    Johnston, A.H.3
  • 75
    • 0029516454 scopus 로고
    • Correlation of picosecond laser-induced latchup and energetic particle-induced latchup in CMOS test structures
    • Dec
    • S. C. Moss, S. D. LaLumondiere, J. R. Scarpulla, K. P. MacWilliams, W. R. Crain, and R. Koga, "Correlation of picosecond laser-induced latchup and energetic particle-induced latchup in CMOS test structures," IEEE Trans. Nucl. Sci, vol. 42, no. 6, pp. 1948-1956, Dec. 1995.
    • (1995) IEEE Trans. Nucl. Sci , vol.42 , Issue.6 , pp. 1948-1956
    • Moss, S.C.1    LaLumondiere, S.D.2    Scarpulla, J.R.3    MacWilliams, K.P.4    Crain, W.R.5    Koga, R.6
  • 76
    • 53349138616 scopus 로고    scopus 로고
    • J. V. Osborn, D. C. Mayer, R. C. Lacoe, S. C. Moss, and S. D. LaLumondiere, Single event latchup characteristics of three commercial CMOS processes, in Proc. 7th NASA Symp. VLSI Design, Albuquerque, NM, 1998, pp. 4.2.1-4.2.14.
    • J. V. Osborn, D. C. Mayer, R. C. Lacoe, S. C. Moss, and S. D. LaLumondiere, "Single event latchup characteristics of three commercial CMOS processes," in Proc. 7th NASA Symp. VLSI Design, Albuquerque, NM, 1998, pp. 4.2.1-4.2.14.
  • 77
    • 0036957353 scopus 로고    scopus 로고
    • Wavelength dependence of transient laser-induced latchup in epitaxial CMOS test structures
    • Dec
    • S. D. LaLumondiere, R. Koga, J. V. Osborn, D. C. Mayer, R. C. Lacoe, and S. C. Moss, "Wavelength dependence of transient laser-induced latchup in epitaxial CMOS test structures," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 2662-2666, Dec. 2002.
    • (2002) IEEE Trans. Nucl. Sci , vol.49 , Issue.6 , pp. 2662-2666
    • LaLumondiere, S.D.1    Koga, R.2    Osborn, J.V.3    Mayer, D.C.4    Lacoe, R.C.5    Moss, S.C.6
  • 78
    • 0037634584 scopus 로고    scopus 로고
    • Impact of scaling on the high current behavior of RF CMOS technology
    • G. Boselli, V. Reddy, and C. Duvvury, "Impact of scaling on the high current behavior of RF CMOS technology," in Proc. 2003 Int. Rel Phys. Symp., 2003, pp. 229-234.
    • (2003) Proc. 2003 Int. Rel Phys. Symp , pp. 229-234
    • Boselli, G.1    Reddy, V.2    Duvvury, C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.