Dose radiation effects in FinFETs

Solid-State Electronics

Volumn 50, Issue 2, 2006, Pages 287-290

  Wu, Xusheng ^a   Chan, Philip C H ^a   Orozco, A ^b   Vazquez, A ^b   Chaudhry, A ^b   Colinge, J P ^b  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b University of California   (United States)

Author keywords

Insulated gate FETs; MOS devices; Radiation effects; Silicon on insulator technology

Indexed keywords

DOSIMETRY; LEAKAGE CURRENTS; MOS DEVICES; RADIATION EFFECTS; SILICA; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

DOSE IRRADIATION; INSULATED GATE FET; OXIDE CHARGES;

FIELD EFFECT TRANSISTORS;

EID: 32344447464     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.12.017     Document Type: Article

References (10)

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