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Volumn 54, Issue 6, 2007, Pages 2338-2346

New insights into single event transient propagation in chains of inverters - Evidence for propagation-induced pulse broadening

Author keywords

Chains of inverters; Digital single event transients; Heavy ion and pulsed laser irradiation; Propagation induced pulse broadening (PIPB) effect; SET propagation; SET width

Indexed keywords

CHAINS OF INVERTERS; DIGITAL SINGLE EVENT TRANSIENTS; PROPAGATION-INDUCED PULSE BROADENING (PIPB) EFFECT; PULSED LASER IRRADIATION;

EID: 37249079736     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.910202     Document Type: Conference Paper
Times cited : (136)

References (19)
  • 3
    • 33144477380 scopus 로고    scopus 로고
    • Variation of digital SET pulse widths and the implications foisingle event hardening of advanced CMOS process
    • Dec
    • J. M. Benedetto, P. H. Eaton, D. G. Mavis, M. Gadlage, and T. Turflinger, "Variation of digital SET pulse widths and the implications foisingle event hardening of advanced CMOS process," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2114-2119, Dec. 2005.
    • (2005) IEEE Trans. Nucl. Sci , vol.52 , Issue.6 , pp. 2114-2119
    • Benedetto, J.M.1    Eaton, P.H.2    Mavis, D.G.3    Gadlage, M.4    Turflinger, T.5
  • 6
    • 0036082034 scopus 로고    scopus 로고
    • Soft error rate mitigation techniques for modem microcircuits
    • Dallas, TX, Apr
    • D. G. Mavis and P. H. Eaton, "Soft error rate mitigation techniques for modem microcircuits," in Proc. Int. Reliability Physics Symp.. Dallas, TX, Apr. 2002, pp. 216-225.
    • (2002) Proc. Int. Reliability Physics Symp , pp. 216-225
    • Mavis, D.G.1    Eaton, P.H.2
  • 10
    • 34548090692 scopus 로고    scopus 로고
    • Estimation of single-event transient voltage pulses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET
    • Aug
    • D. Kobayashi, H. Saito, and K. Hirose, "Estimation of single-event transient voltage pulses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET," IEEE Trans. Nucl. Sci., vol. 54, no. 4, pp. 1037-1041, Aug. 2007.
    • (2007) IEEE Trans. Nucl. Sci , vol.54 , Issue.4 , pp. 1037-1041
    • Kobayashi, D.1    Saito, H.2    Hirose, K.3
  • 12
    • 0032527161 scopus 로고    scopus 로고
    • Pulsed laser induced single event upset and charge collection measurements as a function of optical penetration depth
    • J. S. Melinger, D. McMorrow, A. B. Campbell, S. Buchner, L. H. Tran, A. R. Knudson, and W. R. Curtice, "Pulsed laser induced single event upset and charge collection measurements as a function of optical penetration depth," J. Appl Phys., vol. 84, no. 2, p. 690, 1998.
    • (1998) J. Appl Phys , vol.84 , Issue.2 , pp. 690
    • Melinger, J.S.1    McMorrow, D.2    Campbell, A.B.3    Buchner, S.4    Tran, L.H.5    Knudson, A.R.6    Curtice, W.R.7
  • 13
    • 0034206977 scopus 로고    scopus 로고
    • Application of a pulsed laser for evaluation and optimization of SEU-Hard designs
    • Jun
    • D. McMorrow, J. S. Melinger, S. Buchner, T. Scott, R. D. Brown, and N. F. Haddad, "Application of a pulsed laser for evaluation and optimization of SEU-Hard designs," IEEE Trans. Nucl. Sci., vol. 47, no. 3, p. 559, Jun. 2000.
    • (2000) IEEE Trans. Nucl. Sci , vol.47 , Issue.3 , pp. 559
    • McMorrow, D.1    Melinger, J.S.2    Buchner, S.3    Scott, T.4    Brown, R.D.5    Haddad, N.F.6
  • 15
    • 11044239423 scopus 로고    scopus 로고
    • Production and propagation of single-event transients in high-speed digital logic ICs
    • Dec
    • P. E. Dodd, M. R. Shaneyfelt, J. A. Felix, and J. R. Schwank, "Production and propagation of single-event transients in high-speed digital logic ICs," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3278-3284, Dec. 2004.
    • (2004) IEEE Trans. Nucl. Sci , vol.51 , Issue.6 , pp. 3278-3284
    • Dodd, P.E.1    Shaneyfelt, M.R.2    Felix, J.A.3    Schwank, J.R.4
  • 16
    • 33748354469 scopus 로고    scopus 로고
    • Analysis of the transient response of high performance 50-nm partially depleted SOI transistors using a laser probing technique
    • Aug
    • V. Ferlet-Cavrois, P. Paillet, D. McMorrow, J. S. Melinger, A. B. Campbell, M. Gaillardin, O. Faynot, and O. Thomas, "Analysis of the transient response of high performance 50-nm partially depleted SOI transistors using a laser probing technique," IEEE Trans. Nucl. Sci., vol. 53. no. 4, pp. 1825-1833, Aug. 2006.
    • (2006) IEEE Trans. Nucl. Sci , vol.53 , Issue.4 , pp. 1825-1833
    • Ferlet-Cavrois, V.1    Paillet, P.2    McMorrow, D.3    Melinger, J.S.4    Campbell, A.B.5    Gaillardin, M.6    Faynot, O.7    Thomas, O.8
  • 17
    • 0029409871 scopus 로고
    • On the transient operation of partially depleted SOI NMOSFETs
    • Nov
    • J. Gautier and J. Y. Sun, "On the transient operation of partially depleted SOI NMOSFETs," IEEE Electron Device Lett., vol. 16, no. 11, p. 497, Nov. 1995.
    • (1995) IEEE Electron Device Lett , vol.16 , Issue.11 , pp. 497
    • Gautier, J.1    Sun, J.Y.2
  • 18
    • 0036458610 scopus 로고    scopus 로고
    • A new structure for in-depth history effect characterization on partiallydepleted SOI transistors
    • Oct
    • O. Faynot, T. Poiroux, J. Ouzel, M. Belleville, and J. de Pontcharra, "A new structure for in-depth history effect characterization on partiallydepleted SOI transistors," in Proc. IEEE Int. SOI Conf, Oct. 2002. pp. 35-36.
    • (2002) Proc. IEEE Int. SOI Conf , pp. 35-36
    • Faynot, O.1    Poiroux, T.2    Ouzel, J.3    Belleville, M.4    de Pontcharra, J.5
  • 19
    • 0029753842 scopus 로고    scopus 로고
    • History dependence of output characteristics of silicon-on-insulator (SOI) MOSFETs
    • Jan
    • K.A.Jenkins, J. Y. Sun, and J. Gautier, "History dependence of output characteristics of silicon-on-insulator (SOI) MOSFETs," IEEE Electron Device Lett., vol. 17, no. 1, p. 7, Jan. 1996.
    • (1996) IEEE Electron Device Lett , vol.17 , Issue.1 , pp. 7
    • Jenkins, K.A.1    Sun, J.Y.2    Gautier, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.