Single-event testing using heavy ion irradiation through thick layers of material

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn 1, Issue 2, 2002, Pages 438-442

  Swift, Gary M ^a   Millward, Douglas G ^b   Clark, Henry L ^c  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b Millward Research   (United States)

^c TEXAS A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEAVY IONS; IRRADIATION; MICROPROCESSOR CHIPS; SEMICONDUCTING SILICON; SUBSTRATES; THICK FILMS; THICKNESS MEASUREMENT;

SINGLE EVENT TESTING; THICK LAYERS; THICKNESS DETERMINATION;

SEMICONDUCTOR DEVICE TESTING;

EID: 0036989366     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Tom Scott, "RISC 6000 Single Event Test Results," IBM FSC-Manassas, Dept. Report 92-DP1-012 Rev. 2, Jan. 11, 1993.
2. S. M. Guertin, L. D. Edmonds, and G. M. Swift, "Angular dependence of DRAM upset susceptibility and implications for testing and analysis", IEEE Trans. Nucl. Sci., vol. 47, pp. 2380-2385, Dec. 2000.
3. B. G. Henson, P. T. McDonald, W. J. Stapor, "SDRAM space radiation effects measurements and analysis," 1999 IEEE Radiation Effects Data Workshop (NSREC Workshop Record), pp. 15-23, July 1999.
4. R. Koga, S. H. Crain, P. Yu and K. B. Crawford, "SEE sensitivity determination of high-density DRAMs with limited-range heavy ions," 2000 IEEE Radiation Effects Data Workshop (NSREC Workshop Record), pp. 45-52, July 2000.