Strain effect in semiconductors: Theory and device applications

Strain Effect in Semiconductors: Theory and Device Applications

Volumn , Issue , 2010, Pages 1-350

  Sun, Yongke ^a   Thompson, Scott E ^b   Nishida, Toshikazu ^b  

^a SanDisk Corporation   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84892237381     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/978-1-4419-0552-9     Document Type: Book

References (222)

1. Adachi A (1994) GaAs and related materials: bulk semiconducting and superlattice properties. World Scientific, New York.
2. Ahn D, Chuang SL (1988) Optical gain in a strained-layer quantum-well laser. IEEE J Quantum Electron 24:2400-2406.
3. Alieu J, Bouillon P, Gwoziecki R, Moi D, Bremond G, Skotnicki T (1998) Optimisation of Si0.7Ge0.3 channel heterostructures for 0.15/0.18 μmCMOS process. In: Proceedings of ESSDERC, Bordeaux, France, pp 144-147.
4. Ando T (1982a) Self-consistent results for a gaas/alxga1-xas heterojunction. II. Low temperature mobility. J Phys Soc Japan 51:3900-3907.
5. Ando T (1982b) Self-consistent results for a GaAs/AlxGa1-xAs heterojunction. I. subband structure and light-scattering spectra. J Phys Soc Japan 51:3893-3899.
6. Andrieu F, Ernst T, Romanjek K, Weber O, Renard C, Hartmann JM, Toffoli A, Papon AM, Truche R, Holliger P, Brevard L, Ghibaudo G, Deleonibus S (2003) SiGe channel p-MOSFETS scaling-down. In: Proceedings of ESSDERC, Grenoble, France, pp 267-270.
7. Ang KW, Chui KJ, Tung CH, Balasubramanian N, Li MF, Samudra GS, Yeo YC (2007) Enhanced strain effects in 25-nm gate-length thin-body NMOSFETS with silicon-carbon source/drain and tensile-stress liner. IEEE Electron Dev Lett 28:301-304.
8. Arkwright J, Wu B, Skinner I, Chu P (1994) Resonantly enhanced nonlinearity using stimulated down-pumping in neodymium doped twin-core fibre. Electron Lett 30:235-236.
9. Arnold DP, Gururaj S, Bhardwaj S, Nishida T, Sheplak M (2001) A piezoresistive microphone for aeroacoustic measurements. In: ASME International Mechanical Engineering Congress and Exposition, New York, pp 23, 841-1-23, 841-8.
10. Asada M, Adams AR, Stubkjaer KE, Suematsu Y, Itaha Y, Arai S (1981) The temperature dependence of the threshold current of GaInAsP/InP DH lasers. IEEE J Quantum Electron 17:611-619.
11. Ashcroft NW, Mermin ND (1976) Solid state physics. Saunders College Publishing/Harcourt Brace College Publishers, Forth Worth, TX.
12. Aspnes DE, Cardona M (1978) Piezoresistance and the conduction-band minima of GaAs. Phys Rev B 17:741-751.
13. Assad F, Ren Z, Bendix P, Lundstrom MS (1999) Performance limits of Si MOSFETS. In: Tech. Dig. Int. Electron Device Meet., San Francisco, CA, pp 547-550.
14. Assaderaghi F, Shahidi G (2000) SOI at IBM: current status of technology, modeling, design, and the outlook for the 0.1 μm generation. In: IEEE International SOI Conference, Wakefield, MA, pp 6-9.
15. Bai P, Auth C, Balakrishnan S, Bost M, Brain R, Chikarmane V, Heussner R, Hussein M, Hwang J, Ingerly D, James R, Jeong J, Kenyon C (2004) A 65nm logic technology featuring 35 nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-k ild and 0.57 μm2 SRAM cell. In: Tech. Dig. Int. Electron Device Meet., San Francisco, CA, pp 657-660.
16. Ball CA, van der Merwe JH (1983) Dislocations in solids. North-Holland Press, Amsterdam.
17. Bardeen J (1938) An improved calculation of the energies of metallic Li and Na. J Chem Phys 6:367-371.
18. Bardeen J, Shockley W (1950) Deformation potentials and mobilities in nonpolar crystals. Phys Rev 80:72-80.
19. Beattie AR, Landsberg PT (1958) Auger effect in semiconductors. Proc R Soc A 249:16-29.
20. Bernard MGA, Duraffourg G (1961) Phys Status Solodi 1:699.
21. Bernardini F, Fiorentini V (1997) Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys Rev B 56:R10024-R10027.
22. Berz F (1985) The bethe condition for thermionic emission near an absorbing boundary. Solid State Electron 28:1007-1013.
23. Boermans MJB, Hagen SH, Valster A, Finke MN, der Heyden JMMV (1990) Investigation of TE and TM polarised laser emission in GaInp/AlGaInp lasers by growth-controlled strain. IEEE Electron Lett 26:1438-1439.
24. Bonno O, Barraud S, Mariolle D, Andrieu F (2008) Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and kubo-greenwood mobility calculations. J Appl Phys 103:063, 715-1-063, 715-9.
25. Boresi AP, Schmidt RJ (2003) Advanced mechanics of materials. Wiley, New York.
26. Bour DP, Treat DW, Beernink KJ, Krusor BS, Geels RS, Welch DF (1994) 610-nm band AlGaInp single quantum well laser diode. IEEE Photon Tech Lett 6:128-131.
27. Braga N, Buczkowski A, Kirk HR, Rozgonyi GA (1994) Formation of cylindrical n/p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial Si/Si(Ge). Appl Phys Lett 64:1410-1412.
28. Brantley WA (1973) Calculated elastic-constants for stress problems associated with semiconductor devices. J Appl Phys 44:534-535.
29. Bufler FM, Fichtner W (2003) Scaling of strained-Si n-MOSFETS into the ballistic regime and associated anisotropic effects. IEEE Trans Electron Devices 50:278-284.
30. Burns FP (1957) Piezoresistive semiconductor microphone. J Acoust Soc Amer 29:248-253.
31. Callaway J (1976) Quantum theory of the solid state, 2nd edn. Academic, Boston, MA.
32. Chadi DJ, Cohen ML (1975) Tight-binding calculations of the valence bands of diamond and zincblende crystals. Phys Stat Sol (B) 68:405-491.
33. Chan V, Rengarajan R, Rovedo N, Wei J, Hook T, Nguyen P, Chen J, Nowak E, Xiang-Dong C, Lea D, Chakravarti A, Ku V, Yang S, Steegen A, Baiocco C, Shafer P, Hung N, Shih-Fen H, Wann C (2003) High speed 45nm gate length CMOSFETS integrated into a 90nm bulk technology incorporating strain engineering. In: Tech. Dig. Int. Electron Device Meet., Washington, DC, pp 381-384.
34. Chang CS, Chuang SL (1995) Universal curves for optical-matrix elements of strained quantum wells. Appl Phys Lett 66:795-797.
35. Chang RPH, Coleman JJ (1978) A new method of fabricating gallium arsenide MOS devices. Appl Phys Lett 32:332-333.
36. Chelikowsky JR, Cohen ML (1976) Calculations for the electronic structures of eleven diamond and zinc-blende semiconductors. Phys Rev B 14:556-582.
37. Chidambaram PR, Smith BA, Hall LH, Bu H, Chakravarthi S, Kim Y, Samoilov AV, Kim AT (2004) 35 percent drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS. Hawaii, USA, pp 48-49.
38. Chien-Hao C, Lee TL, Hou TH, Chen CL, Chen CC, Hsu JW, Cheng KL, Chiu YH, Tao HJ, Jin Y, Diaz CH, Chen SC, Liang MS (2004) Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65nm high-performance strained-Si device application. Honolulu, HI, pp 56-57.
39. Cho YK, Kwon SK, Jung HB, Kim J (2005) High Performance Power MOSFETs with Strained-Si Channel. Proceedings-ISPSD, Santa Barbara, CA.
40. Chu M, Nishida T, Lv XL, Mohta N, Thompson SE (2008) Comparison between high-field piezoresistance coefficients of Si metal-oxide-semiconductor field-effect transistors and bulk Si under uniaxial and biaxial stress. J Appl Phys 103:1137041-1137047.
41. Chuang SL (1995) Physics of optoelectronic devices. Wiley-Interscience, Wiley, New York.
42. Corzine SW, Yan RH, Coldren LA (1993) Optical gain in III-V bulk and quantum well semiconductors. In: Zory PS (ed) QuantumWell Lasers. Academic, San Diego, CA.
43. Cui Y, Zhong Z, Wang D, Wang W, Lieber CM (2003) High performance silicon nanowire field effect transistors. Nano Lett 3:149-152.
44. Currie MT, Samavedam SB, Langdo TA, Leitz CW, Fitzgerald EA (1998) Appl Phys Lett 72:1718.
45. Currie MT, Leitz CW, Langdo TA, Taraschi G, Antoniadis DA, Fitzgerald EA (2001) Carrier mobilities and process stability of strained Si n- And p-MOSFETS on SiGe virtual substrates. J Vac Sci Technol B 19:2268-2279.
46. Datta S, Dewey G, Doczy M, Doyle BS, Jin B, Kavalieros J, Kotlyar R, Metz M, Zelick N, Chau R (2003) High mobility Si/SiGe strained channel mos transistors with HfO2/TiN gate stack. In: Tech. Dig. Int. Electron Device Meet., Washington, DC, pp 653-656.
47. Davies JH (1998) The physics of low-dimensional semiconductors - An introduction. Cambridge University Press, New York.
48. Dingle R, WiegmannW, Henry CH (1974) Quantum states of confined carriers in very thin AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructures. Phys Rev Lett 33:827-830.
49. Dingle R, Stormer H, Gossard AC, Wlegmann W (1978) Selective absorption of solar energy in ultrafine chromium particles. Appl Phys Lett 31:665-666.
50. Dismukes JP, Ekstrom L, Steigmeier EF, Kudman I, Beers SD (1964) Thermal and electrical properties of heavily doped Ge-Si alloys up to 1300 k. J Appl Phys 35.
51. Dries JC, Gokhale MR, Thompson KJ, Forrest SR, Hull R (1998) Strain compensated In1-xGaxAs(x ¡ 0.47) quantum well photodiodes for extended wavelength operation. Appl Phys Lett 73:2263-2265.
52. Ozbay E, Kimukin I, Biyikli N, Aytur O, Gokkavas M, Ulu G, Unlu MS, Mirin RP, Berthness KA, Christensen DH (1999) High-speed ¿90% quantumefficiency p-i-n photodiodes with a resonance wavelength adjustable in the 795-835 nm range. Appl Phys Lett 74:1072-1074.
53. Evans MH, Zhang XG, Joannopoulos JD, Pantelides ST (2005) Firstprinciples mobility calculations and atomic-scale interface roughness in nanoscale structures. Phys Rev Lett 95:1068021-1608024.
54. Fang FF, Howard WE (1966) Negative field-effect mobility on (100) Si surfaces. Phys Rev Lett 16:797-799.
55. Ferrier M, Clerc R, Ghibaudo G, Boeuf F, Skotnicki T (2006) Analytical model for quantization on strained and unstrained bulk NMOSFET and its impact on quasi-ballistic current. Solid State Electron 50:69-77.
56. Fiorenza JG, Braithwaite G, Leitz CW, Currie MT, Yap J, Singaporewala F, Yang VK, Langdo TA, Carlin J, Somerville M, Lochtefeld A, Badawi H, Bulsara MT (2004) Film thickness constraints for manufacturable strained silicon CMOS. Semicond Sci Technol 19:L4-L8.
57. Fischetti MV, Laux SE (1996) Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys. J Appl Phys 80:2234-2252.
58. Fischetti MV, Gamiz F, Hansch W (2002) On the enhanced electron mobility in strained-silicon inversion layers. J Appl Phys 92:7320-7324.
59. Fischetti MV, Ren Z, Solomon PM, Yang M, Rim K (2003) Six-band k·p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness. J Appl Phys 94:1079-1095.
60. Fortuna V, Bournel A, Dollfus P, Retailleau S (2006) Ultra-short n-mosfets with strained Si: Device performance and the effect of ballistic transport using monte carlo simulation. Semiconductor Sci Technol 21:422-428.
61. Fossum ER (1995) CMOS image sensors: Electronic camera on a chip. In: Tech. Dig. Int. Electron Device Meet., Washington, DC, pp 17-25.
62. Fossum JG, Weimin Z (2003) Performance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channels. IEEE Trans Electron Devices 50:1042-1049.
63. Frank DJ, Laux SE, Fischetti MV (1992) Mente carlo simulation of a 30 nm dual-gate mosfet: how short can Si go? In: Tech. Dig. Int. Electron Device Meet., Washington, DC, pp 553-556.
64. Froyen S, Harrison WA (1979) Elementary prediction of linear combination of atomic orbitals matrix elements. Phys Rev B 20:2420-2422.
65. Ridley BK (1999) Quantum Processes in Semiconductors, frouth edn. Clarendon Press Oxford, New York.
66. Gamiz F, Roldan JB, Lopez-Villanueva JA, Cartujo-Cassinello P, Carceller JE (1999) Surface roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers. J Appl Phys 86:6854-6863.
67. Gannavaram S, Pesovic N, Ozturk C (2000) Low temperature (800?c) recessed junction selective silicon-germanium source/drain technology for sub-70 nm CMOS. In: Tech. Dig. Int. Electron Device Meet., San Francisco, CA, pp 437-440.
68. Gaworzewski P, Tittelbach-Helmrich K, Penner U (1998) Electrical properties of lightly doped p-type silicon-germanium single crystals. J Appl Phys 83.
69. Gershoni D, Temkin H, Panish MB (1988) Strained-layer ga1-xinxAs/InP avalanche photodetectors. Appl Phys Lett 53:1294-1296.
70. Ghani T, Armstrong M, Auth C, Bost M, Charvat P, Glass G, Hoffmann T, Johnson K, Kenyon C, Klaus J, McIntyre B, Mistry K, Murthy A, Sandford J, Silberstein M, Sivakumar S, Smith P, Zawadzki K, Thompson S, Bohr M (2003) A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors. In: Tech. Dig. Int. Electron Device Meet., Washington, DC, pp 1161-1163.
71. Gnani E, Reggiani S, Gnudi A, Parruccini P, Colle R, Rudan M, Baccarani G (2007) Band-structure effects in ultrascaled silicon nanowires. IEEE Trans Electron Devices 54:2243-2254.
72. Goo JS, Xiang Q, Takamura Y, Wang H, Pan J, Arasnia F, Paton EN, Besser P, Sidorov MV, Adem E, Lochtefeld A, Braithwaite G, Currie MT, Bulsara RHMT, Lin MR (2003) Scalability of strained-Si NMOSFETS down to 25 nm gate length. IEEE Electroc Dev Lett 24:351-353.
73. Goodnick SM, Gann RG, Sites JR, Ferry DK, Fathy D, Krivanek OL (1983) Surface roughness scattering at the Si-sio2 interface. J Vac Sci Technol B 1:803-808.
74. Goodnick SM, Ferry DK, Wilmsen CW, Liliental Z, Fathy D, Krivanek OL (1985) Surface roughness at the Si(100)-SiO2 interface. Phys Rev B 32:8171-8186.
75. Hackbarth T, Herzog HJ, Rinaldi F, Soares T, Hollander B, Manti S, Luysberg M, Fichtner PF (2003) High frequency n-type modfets on ultrathin virtual SiGe substrates. Solid State Electronics 47:1179-1182.
76. Hadjisavvas G, Tsetseris L, Pantelides ST (2007) The origin of electron mobility enhancement in strained MOSFETS. IEEE Electron Dev Lett 28:1018-1020.
77. Hamada H, Tominaga K, Shono M, Honda S, Yodoshi K, Yamaguchi T (1992) Room-temperature cw operation of 610 nm band AlGaInp strained multiquantum well laser diodes with multiquantum barrier. Electron Lett 28:1834-1836.
78. Harley JA, Kenny TW (2000) 1/F noise considerations for the design and process optimization of piezoresistive cantilevers. J Microelectromech Syst 9:226-235.
79. Harrison WA (1976) Pseudopotential theory of covalent bonding. Phys Rev B 14:702-711.
80. Harrison WA (1989) Electronic structure and the properties of solids. Dover, New York.
81. Harrison WA (1999) Elementary electronic structure. World Scientific, Singapore.
82. Hasegawa H (1963) Theory of cyclotron resonance in strained silicon crystals. Phys Rev 129:1029-1040.
83. He R, Yang P (2006) Giant piezoresistance effect in silicon nanowires. Nat Nanotechnol 1:42-46.
84. Hensel JC, Hasegawa H, Nakayama M (1965) Cyclotron resonance in uniaxially stressed silicon. II. nature of the covalent bond. Phys Rev 138:A225-A238.
85. Herring C, Vogt E (1956) Transport and deformation-potential theory for many-valley semiconductors with anisotropic scattering. Phys Rev 101:944-961.
86. Hock G, Kohn E, Rosenblad C, von Kanel H, Herzog HJ, Konig U (2000) High hole mobility in Si0.17Ge0.83 channel metal-oxide-semiconductor fieldeffect transistors grown by plasma-enhanced chemical vapor deposition. Appl Phys Lett 76.
87. Homeijer B, Griffin B, Nishida T, Cattafesta L, Sheplak M (2006) Design optimization of a microelectromechanical piezoresisitive microphone for use in aeroacoustic measurements. J Acoust Soc Am 120:3330.
88. Hong M, Ren F, Kuo JM, Hobson WS, Kwo J, Mannaerts JP, Lothian JR, Chen YK (1997) Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3(Gd2O3) as the gate oxide. J Vac Sci Technol B 16:1398-1400.
89. Houghton DC, Gibbings CJ, Tuppen CG, Lyons MH, Halliwell MAG (1990) Equilibrium critical thickness for Si1-xGex strained layers on (100) Si. Appl Phys Lett 56:460-462.
90. Huang L, Chu JO, Goma SA, D'Emic CP, Koester SK, Canaperi SF, Mooney PM, Cordes SA, Speidell JL, Anderson RM, Wong HSP (2002) Electron and hole mobility enhancement in strained SOI by wafer bonding. IEEE Trans Electron Devices 49.
91. Huet K, Chassat C, Nguyen DP, Retailleau S, Bournel A, Dollfus P (2007) Full band Monte Carlo study of ballistic effects in nanometer-scaled strained p channel double gate MOSFETS. Physica Status Solidi (c) 5:43-46.
92. Inoue K, Sakaki H, Yoshino J, Hotta T (1985) Self-consistent calculation of electronic states in AlGaAs/GaAs/AlGaAs selectively doped doubleheterojunction systems under electric fields. J Appl Phys 58:4277-4281.
93. Irisawa T, Numata T, Toyoda E, Hirashita N, Tezuka T, Sugiyama N, Takagi S (2007) Physical understanding of strain effects on gate oxide reliability of MOSFETS. In: VLSI Symp. Tech. Dig., Hawaii, USA, pp 36-37.
94. Ito S, Namba H, Yamaguchi K, Hirata T, Ando K, Koyama S, Kuroki S, Ikezawa N, Suzuki T, Saitoh T, Horiuchi T (2000) Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design. In: Tech. Dig. Int. Electron Device Meet., Washington, DC, pp 247-250.
95. Jogai B (1998) Effect of in-plane biaxial strains on the band structure of wurtzite GaN. Phys Rev B 57:2382-2386.
96. Kahng AB, Sharma P, Topaloglu R, Rasit O (2007) In: Proc. IEEE Intl. Conf. on CAD.
97. Kanda Y (1982) A graphical representation of the piezoresistance coefficients in silicon. IEEE Trans Electron Dev 29:64-70.
98. Kane EO (1957) Band structure of indium antimonide. J Phys Chem Solids 1:249-261.
99. Kash JA, Zachau M, Tischler MA, Ekenberg U (1994) Optical measurements of warped valence bands in quantum wells. Surf Sci 305:251-255.
100. Kettel C (1996) Introduction to solid state physics, 7th edn. Wiley, New York.
101. Kikuchi A, Kishino K, Kaneko Y (1991) 600 nm-range GaInP/AlInP multiquantum- well (MQW) lasers grown on misorientation substrates by gas source molecular beam epitaxy (gs-mbe). Jpn J Appl Phys 30:3865-3872.
102. Kim BW (2001) Piezoelectric-field effect on electronic and optical properties of [111] InxGa1-xAs/GaAs superlattices. J Appl Phys 89:1197-1204.
103. Kohn W, Luttinger JM (1954) Quantum theory of cyclotron resonance in semiconductors. Phys Rev 96:529-530.
104. 2interface. Appl Phys Lett 32:437-439.
105. Lammers D (2001) IBM banks on SOI, SiGe. EE Times: Columns.
106. Lammers D (1998) IBM takes SOI technology to market. EE Times: Columns.
107. Lee BH, Mocuta A, Bedell S, Chen H, Sadana D, Rim K, O'Neil P, Mo R (2002) Performance enhancement on sub-70 nm strained Si SOI MOSFETS on ultra-thin thermally mixed strained Si/SiGe on insulator (TM-SGOI) substrate with raised S/D. In: Tech. Dig. Int. Electron Device Meet., San Francisco, CA, pp 946-948.
108. Lee WH, Waite A, Nii H, Nayfeh HM, McGahay V, Nakayama H, Fried D, Chen H, Black L, Bolam R, Cheng J (2005) High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-k BEOL. In: Tech. Dig. Int. Electron Device Meet., Washington, DC, pp 56-59.
109. Leitz CW, Currie MT, Kim AY, Lai J, Robbins E, Fitzgerald EA (2001) J Appl Phys 90.
110. Leu PW, Svizhenko A, Cho K (2008) Ab initio calculations of the mechanical and electronic properties of strained Si nanowires. Phys Rev B 77:2353051-23530514.
111. Lim J, Thompson SE, Fossum JG (2004) Comparison of threshold-voltage shifts for uniaxial and biaxial tensile-stressed n-MOSFETS. IEEE Electron Device Lett 25:731-733.
112. Lime F, Andrieu F, Derix J, Ghibaudo G, Boeuf F, Skotnicki T (2005) Low temperature characteriztion of effective mobility in uniaxially and biaxially strained n-MOSFETS. In: Proceedings of ESSDERC, Grenoble, France, pp 525-528.
113. 0.3channel. In: Proceedings of ESSDERC, Firenze, Italy, pp 175-178.
114. Liu YC, Pan JW, Chang TY, Liu PW, Lan BC, Tung CH, Tsai CH, Chen TF, Lee CJ, Wang WM, Chen YA, Shih HL, Tung LY, Cheng LW, Shen TM, Chiang SC, Lu MF, Chang WT, Luo YH, Nayak D, Gitlin D, Meng HL, Tsai CT (2005) Single stress liner for both NMOS and PMOS current enhancement by a novel ultimate spacer process. In: Tech. Dig. Int. Electron Device Meet., Washington, DC, pp 836-839.
115. Lochtefeld A, Antoniadis DA (2001) On experimental determination of carrier velocity in deeply scaled NMOS: How close to the thermal limit? IEEE Electron Device Lett 22:95-97.
116. Loo R, Collaert N, Verheyen P, Caymax M, Delhougne R, Meyer KD (2004) Fabrication of 50 nm high performance strained-SiGe pMOSFETS with selective epitaxial growth. Appl Surf Sci 224.
117. Lowdin P (1951) A note on the quantum-mechanical perturbation theory. J Chem Phys 19:1396-1401.
118. Luisier M, Schenk A, Fichtner W (2006) Atomistic simulation of nanowires in the sp3d5s tight-binding formalism: From boundary conditions to strain calculations. Phys Rev B 74:2053231-20533412.
119. Lundstrom MS (1997) Elementary scattering theory of the Si mosfet. IEEE Electron Device Lett 18:361-363.
120. Lundstrom MS (2001) On the mobility versus drain current relation for a nanoscale mosfet. IEEE Electron Device Lett 22:293-295.
121. Lundstrom MS, Ren Z (2002) Essential physics of carrier transport in nanoscale MOSFETS. IEEE Trans Electron Devices 49:133-141.
122. Luttinger JM (1956) Quantum theory of cyclotron resonance in semiconductors: general theory. Phys Rev 102:1030-1041.
123. Luttinger JM, Kohn W (1955) Motion of electrons and holes in perturbed periodic fields. Phys Rev 97:869-883.
124. Manasevit HM, Gergis IS, Jones AB (1982) Electron mobility enhancement in epitaxial multilayer Si-Si1-xGex alloy films on (100) Si. Appl Phys Lett 41:464-466.
125. Mason WP, Thurston RN (1957) Use of piezoresistive materials in the measurement of displacement, force, and torque. J Acoust Soc Am 29:1096-1101.
126. Matthews JW, Blakeslee AE (1974) Defects in epitaxial multilayers. I. Misfit dislocations. J Cryst Growth 27:118-125.
127. Mheen B, Song YJ, Kang JY, Hong S (2005) Strained-SiGe complementary MOSFETS adopting different thickness of silicon cap layers for low power and high performance applications. ETRI J 27.
128. Mimura T, Yokoyama N, Fukuta M (1979) Electrical characteristics of the plasma-grown native-oxide/GaAs interface. Appl Phys Lett 34:642-644.
129. Mimura T, Hiyamizu S, Fujii T, Nanbu K (1980) A new field-effect transistor with selectively doped GaAs/n-AlxGa1-xAs heterojunctions. Jpn J Appl Phys 19:L225-L227.
130. Mishima Y, Ochimizu H, Mimura A (2005) Strained-silicon formation on relaxed Silicon-germanium/Silicon-on-insulator substrate using laser annealing. Appl Phys Lett 86.
131. Mistry K, Allen C, Auth C, Beattie B, Bergstrom D, Bost M, Brazier M, Buehler M, Cappellani A, Chau R, Choi CH, Ding G, Fischer K, Ghani T, Grover R, Han W, Hanken D, Hattendorf M, He J, Hicks J, Huessner R, Ingerly D, Jain P, James R, Jong L, Joshi S, Kenyon C, Kuhn K, Williams S, Zawadzki K (2007) A 45nm logic technology with high-k+metal gate transistors, strained silicon, 9 cu interconnect layers, 193nm dry patterning, and 100 percent pb-free packaging. In: Tech. Dig. Int. Electron Device Meet., Washington, DC, pp 247-250.
132. Mizuno T, Sugiyama N, Tezuka T, Takagi S (2003) [110] strained-SOI n-MOSFETS with higher electron mobility. IEEE Electron Dev Lett 24.
133. Moss TS, Hawkins TDF (1961) Infrared absorption in gallium arsenide. Infrared Phys 1:111-115.
134. Murthy A, Chau R, Ghani T, Mistry K (2003) Semiconductor transistor having a stressed channel. Intel Corporation, USA.
135. Nayak DK, Woo JCS, Park JS, Wang KL, MacWilliams KP (1993) Highmobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si. Appl Phys Lett 62:2853-2855.
136. Nicholas G, Grasby TJ, Parker EHC, Whall TE, Skotnicki T (2005) IEEE Electron Dev Lett 26: 684-686.
137. Nishizawa J, Shiota I (1980) Inst Phys Conf Ser Chapt 4:289.
138. Nye JF (1984) Physical properties of crystals: Their representation by tensors and matrices. Oxford University Press, Oxford.
139. Oberhuber R, Zandler G, Vogl P (1998) Subband structure and mobility of two-dimensional holes in strained Si/SiGe mosfets. Phys Rev B 58:9941-9948.
140. Olsen SH, Escobedo-Cousin E, Varzgar JB, Agaiby R, Seger J, Dobrosz P, Chattopadhyay S, Bull SJ, O'Neill AG, Hellstrom PE, Edholm J, Ostling M, Lyutovich KL, Oehme M, Kasper E (2006) Control of self-heating in thin virtual substrate strained Si MOSFETS. IEEE Trans Electron Devices 53:2296-2305.
141. Omegacom OEI (2003-2009) Omega strain gauges. http://www.omega.com/ tocasp/sectionsc.asp?book=pressure§ion=e.
142. Onsongo D, Kelly DQ, Dey S, Wise RL, Cleavelin CR, Banerjee SK (2004) Improved hot-electron reliability in strained-Si NMOS. IEEE Trans Electron Devices 51:2193-2199.
143. Packan P, Cea S, Deshpande H, Ghani T, Giles M, Golonzka O, Hattendorf M, Kotlyar R, Kuhn K, Murthy A, Ranade P, Shifren L, Weber C, Zawadzki K (2008) High performance hi-k + metal gate strain enhanced transistors on (110) silicon. In: Tech. Dig. Int. Electron Device Meet., San Francisco, CA, pp 1-4.
144. 3 process for GaAs inversion/accumulation device and surface passivation applications. In: Tech. Dig. Int. Electron Device Meet., Washington, DC, p 383.
145. 3-GaAs interfaces: Fabrication, characterization, and modeling. IEEE Trans Electron Devices 44:214-225.
146. Patel N, Ripper J, Brosson P (1973) Behavior of threshold current and polarization of stimulated emission of gaas injection lasers under uniaxial stress. IEEE J Quantum Electron 9:338-341.
147. Persson C, Lindefelt U (1997) Relativistic band structure calculation of cubic and hexagonal SiC polytypes. J Appl Phys 82:5496-5508.
148. Peterson KE (1982) Silicon as a mechanical material. Proc IEEE 70:420-457.
149. Pfann WG, Thurston RN (1961) Semiconducting stress transducers utilizing transverse and shear piezoresistance effects. J Appl Phys 32:2008-2019.
150. Phillips JC, Kleinman C (1959) New method for calculating wave functions in crystals and molecules. Phys Rev 116:287-294.
151. Pidin S, Mori T, Inoue K, Fukuta S, Itoh N, Mutoh E, Ohkoshi K, Nakamura R, Kobayashi K, Kawamura K, Saiki T, Fukuyama S, Satoh S, Kase M, Hashimoto AK (2004) A novel strain enhanced CMOS architecture using selectively deposited high tensile and high compressive silicon nitride films. In: Tech. Dig. Int. Electron Device Meet., San Francisco, CA, pp 213-216.
152. Price J (1981) Two-dimensional electron transport in semiconductor layers. phonon scattering. Ann Phys 133:217-239.
153. Qiqing O, Min Y, Holt J, Panda S, Huajie C, Utomo H, Fischetti M, Rovedo N, Jinghong L, Klymko N, Wildman H, Kanarsky T, Costrini G, Fried DM, Bryant A, Ott JA, Meikei I, Chun-Yung S (2005) Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates. Honolulu, HI, pp 28-29.
154. Rajagopalan K, Drooopad R, Abrokwah J, Passlack M (2006) Compound semiconductor mosfet structure with high-κ dielectric. In: CS MANTECH Conference, Vancouver, BC, Canada, p 119.
155. Rajagopalan K, Droopad R, Abrokwah J, Zurcher P, Fejes P, Passlack M (2007) 1-μm enhancement mode GaAs n-channel MOSFETS with transconductance exceeding 250 mS/mm. IEEE Electron Dev Lett 28:100-102.
156. Reitz JR, Milford FJ, Christy RW (1979) Foundations of electromagnetic theory. Addison-Wesley, Reading, MA.
157. Ren Z, Lundstrom MS (2000) Simulation of nanoscaleMOSFETS: A scattering theory interpretation. Supperlattices Microstruct 27:177-189.
158. 2 gate dielectrics. Honolulu, HI, pp 12-13.
159. Rim K, Chan K, Shi L, Boyd D, Ott J, Klymko N, Cardone F, Tai L, Koester S, Cobb M (2003) Fabrication and mobility characteristics of ultrathin strained Si directly on insulator (SSDOI) MOSFETS. In: Tech. Dig. Int. Electron Device Meet., Washington, DC, pp 49-52.
160. People R, Bean JC, Lang DV, Sergent AM, Stormer HL, Wecht KW, Lynch RT, Baldwin K (1984) Appl Phys Lett 45:1231.
161. Sacconi F, Carlo AD, Lugli P, Morkoc H (2001) Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs. IEEE Trans Electron Dev 48:450-457.
162. Sah CT (1991) Fundamentals of Solid-State Electronics. World Scientific, Singapore.
163. Samavedam SB, Taylor WJ, Grant JM, Smith JA, Tobin PJ, Dip A, Phillips AM (1999) Relaxation of strained Si layers grown on SiGe buffers. J Vac Sci Technol B 17:1424-1429.
164. Sanders GD, Chang YC (1985) Optical properties in modulation-doped GaAs- Ga1-xAlxAs quantum wells. Phys Rev B 31:6892-6895.
165. 2 interface. J Appl Phys 18:169-175.
166. Seitz F (1940) The modern theory of solids. McGraw Hill, New York.
167. Semikolenova NA, Nesmelowa IM, Khabarov EN (1978) Investigation of the impurity interaction mechanism in indium arsenide. Sov Phys Semicond 12:1139-1142.
168. Senturia SD (2001) Microsystem design. Kluwer Academic, Boston.
169. Sheplak M, Breuer KS, Schmidt MA (1998) A wafer-bonded, silicon-nitride membrane microphone with dielectrically-isolated, single-crystal silicon piezoresistors. In: Technical Digest, Solid-State Sensor and Actuator Workshop, Hilton Head, SC, pp 23-26.
170. Sheplak M, Dugundji J (1998) Large deflections of clamped circular plates under initial tension and transitions to membrane behavior. J Appl Mech- Trans Asme 65:107-115.
171. Shima M (2002) <100> strained-SiGe-channel p-mosfet with enhanced hole mobility and lower parasitic resistance. FUJITSU Sci Tech J 39.
172. Shimizu A, Hachimine K, Ohki N, Ohta H, Koguchi M, Nonaka Y, Sato H, Ootsuka F (2001) Local mechanical-stress control (LMC): A new technique for CMOS-performance enhancement. In: Tech. Dig. Int. Electron Device Meet., San Francisco, CA, pp 433-436.
173. Shiri D, Kong Y, Buin A, Anantram MP (2008) Strain induced change of bandgap and effective mass in silicon nanowires. Appl Phys Lett 93:0731141-0731143.
174. Shiue CC, Sah CT (1979) New mobility-measurement technique on inverted semiconductor surfaces near the conduction threshold. Phys Rev 9:2149- 2162.
175. Shockley W, Bardeen J (1950) Energy bands and mobilities in monatomic semiconductors. Phys Rev 77:407-408.
176. Silver M, O'Reilly EP (1994) Gain and radiative current density in In- GaAs/lnGaAsP lasers with electrostatically confined electron states. IEEE J Quantum Electron 30:547-553.
177. Slater JC, Koster GF (1954) Simplified LCAO method for the periodic potential problem. Phys Rev 94:1498-1524.
178. Smith CS (1954) Piezoresistance effect in germanium and silicon. Phys Rev 94:42-49.
179. Smith DL, Mailhiot C (1988) Piezoelectric effects in strained-layer superlattices. J Appl Phys 63:2717-2719.
180. Stern F (1972) Self-consistent results for n-type Si inversion layers. Phys Rev B 5:4891-4899.
181. 2 interface. Surf Sci 98:154-166.
182. Sugii N, Washio K (2003) Low-temperature electrical characterization of strained-Si MOSFETS. Jpn J Appl Phys 42.
183. Sun G, Sun Y, Nishida T, Thompson SE (2007) Hole mobility in silicon inversion layers: stress and surface orientation. J Appl Phys 102:0845011-0845017.
184. Suzuki N, Hariu T, Shibata Y (1978) Effect of native oxide on the interface property of GaAs MIS structures. Appl Phys Lett 33:761-762.
185. Takagi S (2003) Re-examination of subband structure engineering in ultrashort channel MOSFETS under ballistic carrier transport. Honolulu, HI, pp 115-116.
186. Takagi S, Mizuno T, Tezuka T, Sugiyama N, Numata T, Usuda K, Moriyama Y, Nakaharai S, Koga J, Tanabe A, Hirashita N, Maeda T (2004) Channel structure design, fabrication and carrier transport properties of strained- Si/SiGe-on-insulator (strained-SOI) MOSFETS. In: Tech. Dig. Int. Electron Device Meet.
187. Takagi S, Hoyt JL, Welser JJ, Gibbons JF (1996) Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors. J Appl Phys 80:1567-1577.
188. Takagi S, Mizuno T, Sugiyama N, Tezuka T, Kurobe A (2001) Strained -Si-on-insulator (strained-SOI) MOSFETS - concept, structures and device characteristics. IEICE Trans Electron E84-C.
189. Takagi S, Mizuno T, Tezuka T, Sugiyama N, Numata T, Usuda K, Moriyama Y, Nakaharai S, Koga J, Tanabe A, Maeda T (2004) Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS. Appl Surf Sci 224.
190. Tanaka SI, Lundstrom MS (1994) A compact model HBT device model based on a one-flux treatment of carrier transport. Solid State Electron 37:401-410.
191. Tanaka T, Yanagisawa H, Minagawa S (1994) Comparison between tensilestrained AlGaInp SQW and MQW LDS emitting at 615 nm. Electron Lett 30:566-568.
192. Taraschi G, Pitera AJ, Fitzgerald EA (2004) Strained Si, SiGe, and Ge oninsulator: review of wafer bonding fabrication techniques. Solid State Electron 48:1297-1305.
193. Taur Y, Ning TH (1998) Fundamentals of modern VLSI devices. Cambridge University Press, New York.
194. Taur Y, Buchanan DA, Chen W, Ismail DJF, Lo SH, SaiHalasz GA, Viswanathan RG, Wann HJC, Wind SJ, Wong HS (1997) CMOS scaling into the nanometer regime. Proc IEEE 85:486-504.
195. Thompson SE, Anand N, Armstrong M, Auth C, Arcot B, Alavi M, Bai P, Bielefeld J, Bigwood R, Brandenburg J (2002) A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of cu interconnects, low κ ild, and 1 μm2 SRAM cell. In: Tech. Dig. Int. Electron Device Meet., San Francisco, CA, pp 61-64.
196. Thompson SE, Amstrong M, Auth C, Cea S, Chau R, Glass G, Hoffman T, Klaus J, Ma Z (2004a) A logic nanotechnology featuring strained-silicon. IEEE Electroc Dev Lett 25:191-193.
197. Thompson SE, Sun G, Wu K, Lim J, Nishida T (2004b) Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETS. In: Tech. Dig. Int. Electron Device Meet., San Francisco, CA, pp 221-224.
198. Thompson SE, Sun GY, Choi YS, Nishida T (2006a) Uniaxial-process-induced strained-Si: Extending the CMOS roadmap. IEEE Trans Electron Devices 53:1010-1020.
199. Thompson SE, Suthram S, Sun Y, Sun G, Parthasarathy S, Chu M, Nishida T (2006b) Future of strained Si/Semiconductors in nanoscale MOSFETS. In: Tech. Dig. Int. Electron Device Meet., San Francisco, CA, pp 11-13.
200. Timbrell PY, Baribeau JM, Lockwood DJ, McCaffrey JP (1990) An annealing study of strain relaxation and dislocation generation in Si1-xGex/Si heteroepitaxy. J Appl Phys 67:6292-6300.
201. Uchida K, Krishnamohan T, Saraswat KC, Nishi Y (2005) Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETS and impact of uniaxial stress engineering in ballistic regime. In: Tech. Dig. Int. Electron Device Meet., San Francisco, CA, pp 129-132.
202. Ueno Y, Fujii H, Sawano H, Kobayashi K, Hara K, Gomyo A, Endo K (1993) 30-mw 690-nm high-power strained-quantum-well AlGaInp laser. IEEE J Quantum Electron 29:1851-1856.
203. Valster A, vander Poel CJ, Finke MN, Boermans MJB (1992) Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nm. In: Conference Digest 13th IEEE Inter. Semicond. Laser Conf., Takamatsu, Japan, pp 152-153.
204. Vogl P, Hjalmarson HP, Dow J (1983) A semi-empirical tight-binding theory of the electronic structure of semiconductors. J Phys Chem Solids 44:365-378.
205. de Walle CGV (1989) Band lineups and deformation potentials in the modelsolid theory. Phys Rev B 39:1871-1883.
206. Wand YP, Wu SL, chang SJ (2005) Optimized Si-cap layer thickness for tensile-strained-Si/compressively strained SiGe dual-channel transistors in 0.13 μm complementary metal-oxide-semiconductor technology. Jpn J Appl Phys 44.
207. Wang YC, Hong M, Kuo JM, Mannaerts JP, Kwo J, Tsai HS, Krajewski JJ, Chen YK, Cho AY (1999) Demonstration of submicron depletion-mode GaAs MOSFETS with negligible drain current drift and hysteresis. IEEE Eletron Dev Lett 20:457-459.
208. Washington L, Nouri F, Thirupapuliyur S, Eneman G, Verheyen P, Moroz V, Smith L, Xu X, Kawaguchi M, Huang T, Ahmed K, Balseanu M, Xia LQ, Shen M, Kim Y, Rooyachers R, Meyer KD, Schreutelkamp R (2006) PMOSFET with 200% mobility enhancement induced by multiple stressors. IEEE Electron Dev Lett 27.
209. Weisstein E (1999-2009) Euler angles. In MathWorld-aWolfram web resource. http://mathworld.wolfram.com/EulerAngles.html.
210. Welser J, Hoyt JL, Gibbons JF (1992) NMOS and PMOS transistors fabricated in strained silicon/relaxed silicon-germanium structures. In: Tech. Dig. Int. Electron Device Meet., San Francisco, CA, pp 1000-1002.
211. Wiley JD (1971) Polar mobility of holes in iii-v compounds. Phys Rev B 4:2485-2493.
212. Xiang J, Lu W, Hu Y, Wu Y, Yan H, Lieber CM (2006) Ge/Si nanowire heterostructures as highperformance field-effect transistors. Nature 441: 489-493.
213. Xiang Q, Goo JS, Pan J, Yu B, Ahmed S, Zhang J, Lin MR (2003) Strained silicon NMOS with nickel-silicide metal gate. In: Symposium on VLSI Technology Digest of Technical Papers, Kyoto, Japan, pp 101-102.
214. Xie YH, Gilmer GH, Roland C, Silverman PJ, Buratto SK, Cheng JY, Fitzgerald EA, Kortan AR, Schuppler S, Marcus MA, Citrin PH (1994) Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain. Phys Rev Lett 73:3006-3009.
215. Yamakawa S, Ueno H, Taniguchi K, Miyatsuji K, Masaki K, Ravaioli U (1998) Electron mobility and Monte Carlo device simulation of MOSFETS. VLSI Design 6:27-30.
216. Yan L, Olsen SH, Escobedo-Cousin E, O'Neill AG (2008) Improved gate oxide integrity of strained Si n-channel metal-oxide-silicon field effect transistors using thin virtual substrates. J Appl Phys 103:0945081-09450810.
217. Yang HS, Malik R, Narasimha S, Li Y, Divakaruni R, Agnello P, Allen S, Antreasyan A, Arnold JC, Bandy K, Belyansky M, Bonnoit A, Bronner G, Chan V, Chen X, Chen Z, Chidambarrao D, Chou A, Clark W, Crowder SW, Engel B, Harifuchi H, Huang SF, Jagannathan R, Jamin FF, Kohyama Y, Kuroda H, Lai CW, Lee HK, Lee WH, Lim EH, Lai W, Mallikarjunan A, Matsumoto K, McKnight A, Nayak J, Ng HY, Panda S, Rengarajan R, Steigerwalt M, Subbanna S, Subramanian K, Sudijono J, Sudo G, Sun SP, Tessier B, Toyoshima Y, Tran P, Wise R, Wong R, Yang IY, Wann CH, Su LT, Horstmann M, Feudel T, Wei A, Frohberg K, Burbach G, Gerhardt M, Lenski M, Stephan R, Wieczorek K, Schaller M, Salz H, Hohage J, Ruelke H, Klais J, Huebler P, Luning S, van Bentum R, Grasshoff G, Schwan C, Ehrichs E, Goad S, Buller J, Krishnan S, Greenlaw D, Raab M, Kepler N (2004) Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing. In: Tech. Dig. Int. Electron Device Meet., San Francisco, CA, pp 1075-1077.
218. Yang X, Lim J, Sun G, Wu K, Thompson SE (2006) Strain-induced changes in the gate tunneling currents in p-channel metal-oxide-semiconductor fieldeffect transistors. Appl Phys Lett 88:0521081-0521083.
219. Yoshinobu T, Iwamoto A, Iwasaki H (1994) A self-consistent Monte Carlo simulation for two-dimensional electron transport in MOS inversion layer. Jpn J Appl Phys I 26:1447-1452.
220. Yu PY, Cardona M (1996) Fundamentals of semiconductors. Spinger, Berlin.
221. Zawadski W (1974) Electron transport phenomena in small-gap semiconductors. Adv Phys 23:435-522.
222. Zhang D, Nguyen BY, White T, Goolsby B, Nguyen T, Dhandapani V, Hildreth J, Foisy M, Adams V, Shiho Y, Thean A, Theodore D, Canonico M, Zollner S, Bagchi S, Murphy S, Rai R, Jiang J, Jahanbani M, Noble R, ZavalaM, Cotton R, Eades D, Parsons S, Montgomery P, Martinez A, Winstead B, Mendicino M, Cheek J, Liu J, Grudowski P, Ranami N, Tomasini P, Arena C, Werkhoven C, Kirby H, Chang CH, Lin CT, Tuan HC, See YC, Venkatesan S, Kolagunta V, Cave N, Mogab J (2005) Embedded SiGe S/D PMOS on thin body SOI substrate with drive current enhancement. Honolulu, HI, pp 26-27.