Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis

IEEE Electron Device Letters

Volumn 20, Issue 9, 1999, Pages 457-459

  Wang, Y C ^a   Hong, M ^a   Kuo, J M ^a   Mannaerts, J P ^a   Kwo, J ^a   Tsai, H S ^a   Krajewski, J J ^a   Chen, Y K ^a   Cho, A Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HYSTERESIS; OSCILLATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SHORT CIRCUIT CURRENTS; TRANSCONDUCTANCE;

MAXIMUM OSCILLATION FREQUENCY; SUBMICRON DEPLETION-MODES;

MOSFET DEVICES;

EID: 0032595856     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.784451     Document Type: Article

References (11)

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