Film thickness constraints for manufacturable strained silicon CMOS

Semiconductor Science and Technology

Volumn 19, Issue 1, 2004, Pages

  Fiorenza, J G ^a   Braithwaite, G ^a   Leitz, C W ^a   Currie, M T ^a   Yap, J ^a   Singaporewala, F ^a   Yang, V K ^a   Langdo, T A ^a   Carlin, J ^a   Somerville, M ^b   Lochtefeld, A ^a   Badawi, H ^a   Bulsara, M T ^a  

^a AmberWave Systems Corporation   (United States)

^b FRANKLIN W OLIN COLLEGE OF ENGINEERING   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; GATES (TRANSISTOR); IMPACT IONIZATION; INTERFACES (MATERIALS); LEAKAGE CURRENTS; LIGHT EMISSION; MICROSCOPIC EXAMINATION; MOSFET DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILICON WAFERS;

FILM THICKNESS EFFECTS; PHOTON EMISSION MICROSCOPY;

CMOS INTEGRATED CIRCUITS;

EID: 0347758355     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/1/L02     Document Type: Article

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