Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculations

Journal of Applied Physics

Volumn 103, Issue 6, 2008, Pages

  Bonno, Olivier ^a   Barraud, Sylvain ^a   Mariolle, Denis ^a   Andrieu, Fraņois ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MEASUREMENT THEORY; SILICON; TRANSISTORS;

ATOMIC FORCE MICROSCOPY MEASUREMENTS; ELECTRON EFFECTIVE MOBILITY; SILICON INVERSION LAYERS;

ELECTRON MOBILITY;

EID: 41549111138     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2896589     Document Type: Article

References (43)

1. See, e.g., International Roadmap for Semiconductors 2005, http://www.itrs.net/Links/2005ITRS/Home2005.htm
2. I. Lauer, T. Langdo, Z. -Y. Cheng, J. Fiorenza, G. Braithwaite, M. Currie, C. Leitz, A. Lochtefeld, H. Badawi, M. Bulsara, M. Somerville, and D. Antoniadis, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2003.822686 25, 83 (2004).
3. M. L. Lee, E. A. Fitzgerald, M. T. Bulsara, M. T. Currie, and A. Lochtefeld, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1819976 97, 011101 (2005).
4. F. Andrieu, C. Dupre, F. Rochette, O. Faynot, L. Tosti, C. Buj, E. Rouchouze, M. Casś, B. Ghyselen, I. Cayrefourcq, L. Bŕvard, F. Allain, J. -C. Barb́, J. Cluzel, A. Vandooren, S. Denorme, T. Ernst, C. Fenouillet-B́ranger, C. Jahan, D. Lafond, H. Dansas, B. Previtali, J. P. Colonna, H. Dampreix, P. Gaud, C. Mazuŕ, and S. Deleonibus, in 2006 Symposium on VLSI Technology Digest (IEEE, Piscataway, NJ, 2006), p. 168.
5. K. Rim, K. Chan, L. Shi, D. Boyd, J. Ott, N. Klymko, F. Cardone, L. Tai, S. Koester, M. Cobb, D. Canaperi, B. To, E. Duch, I. Babich, R. Carruthers, P. Saunders, G. Walker, Y. Zhang, M. Steen, and M. Ieong, in Technical Digest-International Electron Device Meeting (2003), p. 49.
6. S. -I. Takagi, J. L. Hoyt, J. J. Welser, and J. F. Gibbons, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.362953 80, 1567 (1996).
7. S. -I. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.337449 41, 2357 (1994).
8. M. V. Fischetti, F. Gamiz, and W. Hansch, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1521796 92, 7320 (2002).
9. M. H. Evans, X. -G. Zhang, J. D. Joannopoulos, and S. T. Pantelides, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.95.106802 95, 106802 (2005).
10. M. H. Evans, M. Caussanel, R. D. Schrimpf, and S. T. Pantelides, in Technical Digest-International Electron Devices Meeting (2005), p. 597.
11. S. T. Pantelides, G. Hadjisavvas, M. H. Evans, L. Tsetseris, M. Caussanel, and R. D. Schrimpf, ECS Trans.. 6, 353 (2007).
12. R. M. Feenstra, M. A. Lutz, F. Stern, K. Ismail, P. M. Mooney, F. K. LeGoues, C. Stanis, J. O. Chu, and B. S. Meyerson, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.587865 13, 1608 (1995).
13. N. Sugii, K. Nakagawa, S. Yamaguchi, and M. Miyao, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125197 75, 2948 (1999).
14. T. Yoshinobu, A. Iwamoto, K. Sudoh, and H. Iwasaki, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.587869 13, 1630 (1995).
15. T. -S. Yoon, J. Liu, A. M. Noori, M. S. Goorsky, and Y. -H. Xie, Appl. Phys. Lett. 87, 012014 (2005). 0003-6951
16. E. Escobedo-Cousin, S. H. Olsen, S. J. Bull, A. G. O'Neill, H. Coulson, C. Claeys, R. Loo, R. Delhougne, and M. Caymax, in SiGe Technology and Device Meeting 2006 (2006), Vol. 1.
17. A. Pirovano, A. L. Lacaita, G. Ghidini, and G. Tallarida, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.817444 21, 34 (2000).
18. O. Bonno, S. Barraud, F. Andrieu, D. Mariolle, F. Rochette, M. Casś, J. M. Hartmann, F. Bertin, and O. Faynot, in 2007 Symposium on VLSI Technology Digest (IEEE, Piscataway, NJ, 2007), p. 134.
19. Y. Zhao, G. C. Wang, and T. -M. Lu, Experimental Methods in the Physical Sciences: Characterization of Amorphous and Crystalline Rough Surface: Principles and Applications (Academic, San Diego, 2001), Vol. 37.
20. Y. H. Xie, G. H. Gilmer, C. Roland, P. J. Silverman, S. K. Buratto, J. Y. Cheng, E. A. Fitzgerald, A. R. Kortan, S. Schuppler, M. A. Marcus, and P. H. Citrin, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.73.3006 73, 3006 (1994).
21. J. Tersoff and F. K. LeGoues, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.72.3570 72, 3570 (1994).
22. L. Thevenod, M. Casś, M. Mouis, G. Reimbold, F. Fillot, B. Guillaumot, and F. Boulanger, Microelectron. Eng.. 80, 11 (2005).
23. S. M. Goodnick, D. K. Ferry, C. W. Wilmsen, Z. Liliental, D. Fathy, and O. L. Krivanek, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.32.8171 32, 8171 (1985).
24. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. RMPHAT 0034-6861 10.1103/RevModPhys.54.437 54, 437 (1982).
25. M. V. Fischetti and S. E. Laux, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.48.2244 48, 2244 (1993).
26. M. V. Fischetti, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1332424 89, 1232 (2001).
27. M. V. Fischetti, Z. Ren, P. M. Solomon, M. Yang, and K. Rim, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1585120 94, 1079 (2003).
28. ATLAS Users manual, version 5.11.34.C (Silvaco, Santa Clara, CA, 2006).
29. Since experimental as well as theoretical results (see, e.g., Ref.) show that [100]-(001) and [110]-(001) long-channel electron effective mobility are almost the same, for simplicity we take the axis [100], [010], and [001] to set the coordinate system. Indeed, with this choice all valleys have a diagonal effective mass tensor (Ref.).
30. D. Esseni, A. Abramo, L. Selmi, and E. Sangiorgi, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2003.819256 50, 2445 (2003).
31. B. K. Ridley, J. Phys. C JPSOAW 0022-3719 10.1088/0022-3719/15/28/021 15, 5899 (1982).
32. C. Jacoboni and L. Reggiani, Rev. Mod. Phys. RMPHAT 0034-6861 10.1103/RevModPhys.55.645 55, 645 (1983).
33. F. Gámiz, J. B. Roldán, J. A. López-Villanueva, P. Cartujo-Cassinello, and J. E. Carceller, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.371763 86, 6854 (1999).
34. F. Gámiz and J. B. Roldán, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1577227 94, 392 (2003).
35. S. Saito, K. Torii, Y. Shimamoto, S. Tsujikawa, H. Hamamura, O. Tonomura, T. Mine, D. Hisamoto, T. Onai, J. Yugami, M. Hiratani, and S. Kimura, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1650551 84, 1395 (2004).
36. D. Esseni, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2003.822344 51, 394 (2004).
37. P. F. Maldague, Surf. Sci. SUSCAS 0039-6028 10.1016/0039-6028(78)90507-1 73, 296 (1978).
38. M. V. Fischetti and S. E. Laux, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.363052 80, 2234 (1996).
39. M. M. Rieger and P. Vogl, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.48.14276 48, 14276 (1993).
40. D. Esseni, M. Mastrapasqua, G. Celler, C. Fiegna, L. Selmi, and E. Sangiorgi, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.974714 48, 2842 (2001).
41. M. V. Fischetti, S. Narayanan, T O'Reagan, and C. Sachs, ECS Trans.. 3, 33 (2006).
42. A. Rahman, M. S. Lundstrom, and A. W. Ghosh, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1845586 97, 053702 (2005).
43. R. Brunetti, C. Jacoboni, F. Nava, L. Reggiani, G. Bosman, and R. J. J. Zijlstra, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.328622 52, 6713 (1981).