Future of strained Si/semiconductors in nanoscale MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Thompson, S E ^a   Suthram, S ^a   Sun, Y ^a   Sun, G ^a   Parthasarathy, S ^a   Chu, M ^a   Nishida, T ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

(ABIOTIC AND BIOTIC) STRESS; APPLIED (CO); ENHANCED MOBILITY; INITIAL PROCESS; INTERNATIONAL (CO); MECHANICAL STRESSING; MOBILITY ENHANCEMENT; MOSFETS; NANOSCALE MOSFETS; PROCESS INDUCED STRAINED SILICON (PSS); UNIAXIAL STRESSES; WAFER BENDING;

ELECTRON DEVICES; ELECTRONS; HOLE MOBILITY; SILICON WAFERS; STRESSES;

MOSFET DEVICES;

EID: 46149113480     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346877     Document Type: Conference Paper

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