Simulation of nanoscale MOSFETs: A scattering theory interpretation

Superlattices and Microstructures

Volumn 27, Issue 2, 2000, Pages 177-189

  Ren, Zhibin ^a   Lundstrom, Mark ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHARGE TRANSFER; COMPUTER SIMULATION; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

NANOELECTRONICS;

MOSFET DEVICES;

EID: 0033741127     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1999.0798     Document Type: Article

References (14)

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