On experimental determination of carrier velocity in deeply scaled NMOS: How close to the thermal limit?

IEEE Electron Device Letters

Volumn 22, Issue 2, 2001, Pages 95-97

  Lochtefeld, Anthony ^a   Antoniadis, Dimitri A ^a  

^a USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; CARRIER MOBILITY; CHARGE CARRIERS; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

CARRIER VELOCITY; THERMAL VELOCITY;

MOSFET DEVICES;

EID: 0035250137     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.902843     Document Type: Article

References (12)

1. M. Lundstrom, "Elementary scattering theory of the Si MOSFET." IEEE Electron Device Lett., pp. 361-363, July 1997.
2. G. Shahidi, D. Antoniadis, and H. Smith, "Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers." IEEE Electron Device Lett., pp. 94-96, Feb. 1988.
3. S. Laux, M. Fischetti, and D. Frank, "Monte Carlo analysis of semiconductor devices: The DAMOCLES program." IBM J. Res. Develop., vol. 34, pp. 466-494, July 1990.
4. F. Assad et al., "Performance limits of silicon MOSFET's," in 1999 IEDM Tech. Dig., pp. 547-550.
5. T. Mizuno and R. Ohba, "Experimental study of nonstationary electron transport in sub-0.1 μm metal-oxide-silicon devices: Velocity overshoot and it's degradation mechanism," J. Appl. Phys., vol. 82, pp. 5235-5240, Nov. 1997.
6. D. Antoniadis, "Physics and technology for MOSFET's at 0.1 micron and below," in ESSDERC Proc., 1993, pp. 3-9.
7. Y. Taur et al., "A 'new shift and ratio' method for MOSFET channel-length extraction," IEEE Electron Device Lett., pp. 267-269, May 1992.
8. H. Hu, J. Jacobs, L. Su, and D. Antoniadis, "A study of deep-submicron MOSFET scaling based on experiment and simulation," IEEE Trans. Electron Devices, vol. 43, pp. 669-677, Apr. 1995.
9. Y. Taur, C. Wann, and D. Frank, "25 nm CMOS design considerations," in IEDM Tech. Dig., 1998, pp. 789-792.
10. N. Yang, W.K. Henson, J. Hauser, and J. Wortman, "Estimation of the effects of remote charge scattering on electron mobility on n-MOSFET's with ultrathin gate oxides," IEEE Trans. Electron Devices, vol. 47, pp. 440-447, Feb. 2000.
11. R. Logan, Y. Taur, and E. Crabbe, "Asymmetry in effective-channel length of n-and p-MOSFETs," in Proc. SISPAD, 1997, pp. 21-24.
12. F. Assad et al., "Modeling on-currents for n-MOSFETs: Ultimate limits vs. the NTRS," in Proc. Int. Conf. Modeling and Simulation of Microsystems, San Juan, PR, Apr. 1999, pp. 388-390.