Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

Applied Physics Letters

Volumn 72, Issue 14, 1998, Pages 1718-1720

  Currie, M T ^a   Samavedam, S B ^a   Langdo, T A ^a   Leitz, C W ^a   Fitzgerald, E A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000059047     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121162     Document Type: Article

References (12)

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