Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2268-2279

  Currie, M T ^a   Leitz, C W ^a   Langdo, T A ^a   Taraschi, G ^a   Fitzgerald, E A ^a   Antoniadis, D A ^b  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; ELECTRONIC DENSITY OF STATES; HIGH TEMPERATURE EFFECTS; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; ULTRAHIGH VACUUM;

CARRIER CONFINEMENT; SILICON GERMANIDE; VIRTUAL SUBSTRATE PLANARIZATION; WELL IMPLANTATION;

MOSFET DEVICES;

EID: 0035519123     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1421554     Document Type: Article

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