<100> strained-SiGe-channel p-MOSFET with enhanced hole mobility and lower parasitic resistance

Fujitsu Scientific and Technical Journal

Volumn 39, Issue 1, 2003, Pages 78-83

  Shima, Masashi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC RESISTANCE; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; HOLE MOBILITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE;

ELECTRONIC-BAND STRUCTURE; GATE LENGTH; LOWER PARASITIC RESISTANCE;

MOSFET DEVICES;

EID: 0043199875     PISSN: 00162523     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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7. x Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition. Japanese Journal of Applied Physics, 32, p.438-441 (1993).
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10. H. Sayama et al.: Effect of <100> Channel Direction for High Performance SCE Immune pMOSFET with Less Than 0.15μm Gate Length. International Electron Devices Meeting Technical Digest, p.657-660, 1999.