Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 49-52

  Rim, K ^a   Chan, K ^a   Shi, L ^a   Boyd, D ^a,b   Ott, J ^a   Klymko, N ^a,b   Cardone, F ^a   Tai, L ^a   Koester, S ^a   Cobb, M ^a   Canaperi, D ^a   To, B ^a   Duch, E ^a   Babich, I ^a   Carruthers, R ^a   Saunders, P ^a   Walker, G ^a,b   Zhang, Y ^a   Steen, M ^a   Ieong, M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Microelectronics Division   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT HOLE-HEAVY HOLE (LH-HH) BAND; OPTICAL MICROGRAPHS; STRAINED SILICON DIRECTLY ON INSULATOR (SSDOI);

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRON MOBILITY; EPITAXIAL GROWTH; HOLE MOBILITY; ION IMPLANTATION; RAMAN SCATTERING; SECONDARY ION MASS SPECTROMETRY; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SURFACE ROUGHNESS; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

MOSFET DEVICES;

EID: 0842309839     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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