Strained-silicon formation on relaxed silicon-germanium/ silicon-on-insulator substrate using laser annealing

Applied Physics Letters

Volumn 86, Issue 7, 2005, Pages 1-2

  Mishima, Yasuyoshi ^a   Ochimizu, Hirosato ^a   Mimura, Atsushi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; EXCIMER LASERS; FILM GROWTH; MOSFET DEVICES; RAMAN SPECTROSCOPY; RELAXATION PROCESSES; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE; ULTRAHIGH VACUUM;

EXCIMER LASER ANNEALING; FIELD-EFFECT MOBILITY; LASER POWER DENSITY; STRAINED SILICON;

SILICON;

EID: 17044372002     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1865344     Document Type: Article

References (9)

1. T. Mizuno, S. Takgi, N. Sugiyama, H. Satake, A. Kurobe, and A. Toriumi, IEEE Electron Device Lett. 21, 230 (2000).
2. T. Tezuka, N. Sugiyama, Y. Mizuno, M. Suzuki, and S. Takagi, Jpn. J. Appl. Phys., Part 1 40, 2866 (2001).
3. Z. Y. Cheng, M. T. Currie, C. W. Leitz, G. Taraschi, E. A. Fitzgerald, J. L. Hoyt, and D. A. Antoniadas, IEEE Electron Device Lett. 22, 321 (2001).
4. F. Takeuchi, Y. Takizawa, S. Noda, and Y. Mishima, Extended Abstract of AM-LCD 99 Digest, Japan, 1999, p. 169.
5. M. I. Alonso and K. Winer, Phys. Rev. B 39, 10056 (1989).
6. B. Dietrich, E. Bugiel, J. Klatt, G. Lippert, T. Morgenstern, H. J. Osten, and P. Zaumseil, J. Appl. Phys. 74, 3177 (1993).
7. C. H. Perry, P. Lu, and F. Namavar, Solid State Commun. 88, 613 (1993).
8. J. C. Tsang, P. M. Mooney, F. Dacol, and J. O. Chu, J. Appl. Phys. 78, 8098 (1994).
9. C. K. Maiti, N. B. Chakrabarti, and S. K. Ray, Strained Silicon Heterostructures Materials and Devices (IEE, London, UK, 2001), p. 104.