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Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 15, 1998, Pages 9941-9948

Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s

(3) Oberhuber, R a Zandler, G a Vogl, P a

a WALTER SCHOTTKY INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000363279 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.58.9941 Document Type: Article

Times cited : (251)

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