Performance enhancement on sub-70 nm strained silicon SOI MOSFETS on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 946-948

  Lee, B H ^a   Mocuta, A ^a   Bedell, S ^b   Chen, H ^a   Sadana, D ^b   Rim, K ^b   O'Neil, P ^a   Mo, R ^a   Chan, K ^b   Cabral, C ^b   Lavoie, C ^b   Mocuta, D ^a   Chakravarti, A ^a   Mitchell, R M ^a   Mezzapelle, J ^a   Jamin, F ^a   Sendelbach, M ^a   Kermel, H ^a   Gribelyuk, M ^a   Domenicucci, A ^a   Jenkins, K A ^a   Narasimha, S ^a   Ku, S H ^a   Ieong, M ^b   Yang, I Y ^a   Leobandung, E ^a   Agnello, P ^a   Haensch, W ^b   Welser, J ^a   more..

^a IBM MICROELECTRONICS   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON MOBILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

ULTRA-THIN SUBSTRATES;

MOSFET DEVICES;

EID: 0036923772     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. K.Rim et al, VLSI symposium, p.99, 2002.
2. L.-J. Huang et al, VLSI symposium, p.57, 2001.
3. T.Mizuno et al, VLSI symposium, p.107, 2002.
4. T.Tezuka, Appl. Phys. Lett., v.80, p.3560, 2002.
5. J.W.Sleight et al, Tech. Dig. of IEDM, p.245, 2001.
6. K.A. Jenkins et al, TED, v.44, N.11, p. 1923, 1997.