Improved gate oxide integrity of strained Si n -channel metal oxide silicon field effect transistors using thin virtual substrates

Journal of Applied Physics

Volumn 103, Issue 9, 2008, Pages

  Yan, L ^a   Olsen, S H ^a   Escobedo Cousin, E ^a   O'Neill, A G ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HEATING; LEAKAGE CURRENTS; RELIABILITY ANALYSIS; STRAIN MEASUREMENT; TENSILE STRAIN;

CHANNEL THICKNESS; STRESS-INDUCED LEAKAGE CURRENT (SILC); ULTRATHIN GATE OXIDE; WAFER LEVEL STRESSORS;

MOSFET DEVICES;

EID: 43949109929     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2917286     Document Type: Article

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