Optimized Si-cap layer thickness for tensile-strained-Si/compressively strained SiGe dual-channel transistors in 0.13 μm complementary metal oxide semiconductor technology

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 37-41, 2005, Pages

  Wang, Yen Ping ^a   Wu, San Lein ^b   Chang, Shoou Jinn ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

Compressively strained SiGe; Dual channel; Tensile strained Si

Indexed keywords

CARRIER MOBILITY; ELASTIC MODULI; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; THICKNESS MEASUREMENT;

COMPRESSIVELY STRAINED SIGE; CURRENT DRIVES; DUAL CHANNEL; TENSILE-STRAINED SI;

MOSFET DEVICES;

EID: 31844446807     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1248     Document Type: Article

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