Low Dit, thermodynamically stable Ga2O3-GaAs interfaces: fabrication, characterization, and modeling

IEEE Transactions on Electron Devices

Volumn 44, Issue 2, 1997, Pages 214-225

  Passlack, M ^a,d   Mannaerts, J P ^a   Opila, R L ^b   Chu, S N G ^c   Moriya, N ^b   Ren, F ^a   Kwo, J R ^a  

^a IEEEM Hong   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c MOTOROLA INC   (United States)

^d Netmor Ltd Applied Modeling Research   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DEPOSITION; ELECTRONIC PROPERTIES; FABRICATION; HETEROJUNCTIONS; INTERFACES (MATERIALS); MODELS; MOLECULAR BEAM EPITAXY; MOLECULES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; THERMODYNAMIC STABILITY;

CAPACITANCE VOLTAGE; CONDUCTANCE VOLTAGE; EPITAXIAL FILM; GALLIUM OXIDE; MINORITY CARRIER; PHOTOCHEMICAL STABILITY; THERMAL DESORPTION; ULTRAHIGH VACUUM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031075990     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.557709     Document Type: Article

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