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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 1924-1927

Low-temperature electrical characteristics of strained-Si MOSFETs

(2) Sugii, Nobuyuki a Washio, Katsuyoshi a

a HITACHI LTD (Japan)

Author keywords

CMOS; Germanium; Mobility; MOSFET; Scattering; Silicon; Strain

Indexed keywords

CARRIER MOBILITY; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRON SCATTERING; LOW TEMPERATURE PROPERTIES; PHONONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

LOW-TEMPERATURE ELECTRICAL CHARACTERISTICS; PHONON SCATTERING;

MOSFET DEVICES;

EID: 0038348088 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.1924 Document Type: Article

Times cited : (15)

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