Evidence of reduced self-heating in strained Si MOSFETs

IEEE Electron Device Letters

Volumn 26, Issue 9, 2005, Pages 684-686

  Nicholas, Gareth ^a   Grasby, Tim J ^a   Parker, Evan H C ^a   Whall, Terry E ^a   Skotnicki, Thomas ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b STMICROELECTRONICS   (France)

Author keywords

MOSFET; Self heating; SiGe; Strained silicon

Indexed keywords

ALUMINUM; ELECTRIC VARIABLES MEASUREMENT; HEAT RESISTANCE; HEATING; HIGH TEMPERATURE EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; STRAIN;

PULSED MEASUREMENTS; SELF-HEATING; STRAINED SILICON; THERMAL DEVICE SIMULATIONS;

MOSFET DEVICES;

EID: 26444607889     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.854385     Document Type: Article

References (9)

1. S. Takagi, J. L. Hoyt, J. J. Welser, and J. F. Gibbons, "Comparative study of phonon limited mobility of two-dimensional electrons in strained and unstrained-Si metal-oxide-semiconductor field-effect transistors," J. Appl. Phys., vol. 80, no. 3, pp. 1567-1577, Aug. 1996.
2. J. P. Dismukes, L. Ekstrom, E. F. Steibrmeier, I. Kudman, and D. S. Beers, "Thermal and electric properties of heavily doped Ge-Si alloys up to 1300 K," J. Appl. Phys., vol. 35, no. 10, pp. 2899-2907, Oct. 1964.
3. K. A. Jenkins and J. Y.-C. Sun, "Measurement of I-V curves of silicon-on-insulator (SOI) MOSFETs without self-heating," IEEE Electron Device Lett., vol. 16, no. 4, pp. 145-147, Apr. 1995.
4. M. Jurezak, T. Skotnicki, G. Ricci, Y. Campidelli, C. Hernandez, and D. Bensahel, "Study on enhanced performance in NMOSFETs on strained silicon," in Proc. ESSDERC, 1999, pp. 304-307.
5. S. Polonsky and K. A. Jenkins, "Time-resolved measurements of self-heating in SOI and strained-silicon MOSFETs using photon emission microscopy," IEEE Electron Device Lett., vol. 25, no. 4, pp. 208-210, Apr. 2004.
6. K. A. Jenkins and K. Rim, "Measurement of the effect of self-heating in strained-silicon MOSFETs," IEEE Electron Device Lett., vol. 23, no. 6, pp. 360-362, Jun. 2002.
7. L. T. Su, J. E. Chang, D. A. Antoniadis, K. E. Goodson, and M. I. Flik, "Measurement and modeling of self-heating in SOI NMOSFETs," IEEE Trans. Electron Devices, vol. 41, no. 1, pp. 69-75, Jan. 1994.
8. Atlas Device Simulation Software, Silvaco International, Santa Clara, CA, 2004.
9. T. Hackbarth et al., "High frequency n-type MODFETs on ultrathin virtual SiGe substrates," Solid State Electron., vol. 47, no. 7, pp. 1179-1182, Jul. 2003.