Comparison between high-field piezoresistance coefficients of Si metal-oxide-semiconductor field-effect transistors and bulk Si under uniaxial and biaxial stress

Journal of Applied Physics

Volumn 103, Issue 11, 2008, Pages

  Chu, Min ^a   Nishida, Toshikazu ^a   Lv, Xiaoliang ^a   Mohta, Nidhi ^a   Thompson, Scott E ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER NETWORKS; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; ELECTROACUPUNCTURE; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTROMAGNETISM; FIELD EFFECT TRANSISTORS; ION BEAMS; MAGNETISM; MOSFET DEVICES; PHOTOACOUSTIC EFFECT; SEMICONDUCTOR MATERIALS; SILICON; SILICON WAFERS; SMELTING; SURFACES; THRESHOLD CURRENT DENSITY; TRANSISTORS; TWO DIMENSIONAL;

(1 1 0) SURFACE; AMERICAN INSTITUTE OF PHYSICS (AIP); APPLIED ELECTRIC FIELD; BIAXIAL STRESSES; CONCENTRIC (CO); DOPING DENSITIES; ELECTRIC FIELD DEPENDENCES; FOUR POINT; HIGH FIELDS; IN-PLANE (IP); INVERSION LAYERS; METAL-OXIDE SEMICONDUCTOR (MOS); MOSFETS; N MOSFETS; P TYPE SILICON; PIEZORESISTANCE COEFFICIENTS; QUANTIZATION EFFECTS; TWO-DIMENSIONAL (2D); WAFER BENDING;

SEMICONDUCTING SILICON;

EID: 45149103260     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2936890     Document Type: Article

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