Electron mobility and Monte Carlo device simulation of MOSFETs

VLSI Design

Volumn 6, Issue 1-4, 1998, Pages 27-30

  Yamakawa, S ^a   Ueno, H ^a   Taniguchi, K ^a   Hamaguchi, C ^a   Miyatsuji, K ^b   Masaki, K ^c   Ravaioli, U ^d  

^a OSAKA UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

^c ANAN NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^d UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; PHONONS; SEMICONDUCTING SILICON; SIMULATION;

ELECTRON MOBILITY;

MOSFET DEVICES;

EID: 0031636120     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/92737     Document Type: Article

References (7)

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3. P. J. Price, "Two-dimensional electron transport in semiconductor layers, I. Phonon scattering," Ann. Phys. 133, 217 (1981).
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5. T. Ando, A. B. Fowler and F. Stem, "Electronic properties of two-dimensional systems," Rev. Mod. Phys. 54, 437 (1982).
6. 2 interface," Phys. Rev. B32, 8171 (1985).
7. S. Takagi and A. Toriumi, "New experimental findings on hot carrier transport under velocity saturation regime in Si MOSFET," IEDM Tech. Dig., 711 (1992).