High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 56-59

  Lee, W H ^a   Waite, A ^a   Nii, H ^a   Nayfeh, H M ^a   McGahay, V ^a   Nakayama, H ^a   Fried, D ^a   Chen, H ^a   Black, L ^a   Bolam, R ^a   Cheng, J ^a   Chidambarrao, D ^a   Christiansen, C ^a   Cullinan Scholl, M ^a   Davies, D R ^a   Domenicucci, A ^a   Fisher, P ^a   Fitzsimmons, J ^a   Gill, J ^a   Gribelyuk, M ^a   Harmon, D ^a   Holt, J ^a   Ida, K ^a   Kiene, M ^a   Kluth, J ^a   Labelle, C ^a   Madan, A ^a   Malone, K ^a   McLaughlin, P V ^a   Minami, M ^a   Mocuta, D ^a   Murphy, R ^a   Muzzy, C ^a   Newport, M ^a   Panda, S ^a   Peidous, I ^a   Sakamoto, A ^a   Sato, T ^a   Sudo, G ^a   VanMeer, H ^a   Yamashita, T ^a   Zhu, H ^a   Agnello, P ^a   Bronner, G ^a   Freeman, G ^a   Huang, S F ^a   Ivers, T ^a   Luning, S ^a   Miyamoto, K ^a   Nye, H ^a   Pellerin, J ^a   Rim, K ^a   Schepis, D ^a   Spooner, T ^a   Chen, X ^a   Khare, M ^a   Horstmann, M ^b   Wei, A ^b   Kammler, T ^b   Hontschel J ^b   Bierstedt, H ^b   Engelmann, H J ^b   Hellmich, A ^b   Hempel, K ^b   Koerner, G ^b   Neu, A ^b   Otterbach, R ^b   Reichel, C ^b   Trentsch, M ^b   Press, P ^b   Frohberg, K ^b   Schaller, M ^b   Salz, H ^b   Hohage, J ^b   Ruelke, H ^b   Klais, J ^b   Raab, M ^b   Greenlaw, D ^b   Kepler, N ^b   more..

^a IBM RESEARCH   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DUAL STRESS LINERS (DSL); INTERCONNECT DELAY; STRESS MEMORIZATION TECHNIQUES; TRANSISTOR STRAIN;

CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33847739343     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. E. Leobandung et al. VLSI 2004 p. 126
2. H. S. Yang et al. IEDM 2004, p. 1075
3. M. Fukasawa et al., IITC 2005
4. K. Rim et al. IEDM 2002 p. 43-46