Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3(Gd2O3) as the gate oxide

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1398-1400

  Hong, M ^a   Ren, F ^a   Kuo, J M ^a   Hobson, W S ^a   Kwo, J ^a   Mannaerts, J P ^a   Lothian, J R ^a   Chen, Y K ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000752362     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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2. For a review, see Dielectric Films on Gallium Arsenide, edited by W. F. Croydon and E. H. C. Parker (Gordon and Breach, New York. 1981).
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4. M. Passlack, M. Hong, J. P. Mannaerts, R. L. Opila, S. N. G. Chu, N. Moriya, F. Ren, and J. Kwo, IEEE Trans. Electron Devices 44, 214 (1997).
5. F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, Y. K. Chen, and A. Y. Cho, Tech. Dig. Int. Electron Devices Meet. 943 (1996).
6. F. Ren, M. Hong, J. P. Mannaerts, J. R. Lothian, and A. Y. Cho, J. Electrochem. Soc. 144, L239 (1997).
7. T. Mimura and M. Fukuta. IEEE Trans. Electron Devices 27, 1147 (1980), and references therein.
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9. M. Hong, J. P. Mannaerts, M. A. Marcus, J. Kwo, A. M. Sergent, L. J. Chou, K. C. Hsieh, and K. Y. Cheng, J. Vac. Sci. Technol. B, these proceedings.
10. M. Hong, T. S. Lay, C. T. Liu, J. Kwo, J. P. Mannaerts, and A. M. Sergent (unpublished results).