Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner

IEEE Electron Device Letters

Volumn 28, Issue 4, 2007, Pages 301-304

  Ang, Kah Wee ^a   Chui, King Jien ^a   Tung, Chih Hang ^b   Balasubramanian, N ^b   Li, Ming Fu ^a   Samudra, Ganesh S ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Electron mobility; nMOSFET; Silicon nitride liner; Silicon carbon (Si1 y Cy); Strain; Stress

Indexed keywords

CARBON SOURCE; DRAIN-INDUCED BARRIER LOWERING; ENHANCED STRAINS; ETCH-STOP LAYERS; GATE-LENGTH; HIGH-PERFORMANCE CMOS; INDUCED MOBILITY; NMOSFET; NMOSFETS; PERFORMANCE ENHANCEMENTS; STRAINED-SILICON; STRESS LINER; SUBTHRESHOLD SWING; THIN BODY; SILICON CARBON;

ELECTRIC BREAKDOWN; ELECTRON MOBILITY; MOSFET DEVICES; SILICON NITRIDE; STRAIN; STRESSES;

SILICON; ELECTRON MOBILITY;

EID: 36248976403     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.893221     Document Type: Article

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