Compound semiconductor MOSFET structure with high-dielectric

2006 International Conference on Compound Semiconductor Manufacturing Technology

Volumn , Issue , 2006, Pages 119-121

  Rajagopalan, Karthik ^a   Drooopad, Ravi ^a   Abrokwah, Jon ^a   Passlack, Matthias ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

GaAs MOSFET; High mobility MOSFET; III V MOSFET

Indexed keywords

COMPOUND SEMICONDUCTORS; ENHANCEMENT MODES; GAAS MOSFET; III-V MOSFET; IN-MOLE-FRACTION; MOS-FET; MOSFET STRUCTURES; SHEET CARRIER CONCENTRATION;

DIELECTRIC MATERIALS; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE;

MOSFET DEVICES;

EID: 84887474889     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. W. Zhu, J.P. Han and T.P. Ma, "Mobility measurement and degradation mechanisms of MOSFET's made with ultrathin high-κ dielectrics", IEEE Trans. Electron Devices, vol. 51, no.1, pp. 98-105, Jan 2004.
2. The International Technology Roadmap for Semiconductors, 2004 Edition.
3. M. Passlack, R. Droopad, K. Rajagopalan, J. Abrokwah, R. Gregory, D. Nguyen, "High Mobility NMOSFET Structure with High-k Dielectric, " IEEE Electron. Dev. Lett., vol. 26, no. 10, pp. 713-715, 2005.
4. M. Passlack, "Methodology for Development of High-κ Stacked Gate Dielectrics on III-V Semiconductors, " in Materials Fundamentals of Gate Dielectrics, " edited by A.A. Demkov and A. Navrotsky, Springer Verlag, 2005, pp. 403-467.
5. M. Passlack, "Development Methodology for High-k Gate Dielectrics on III-V Semiconductors: GdxGa0.4-xO0.6/Ga2O3 Dielectric Stacks on GaAs, " J. Vacuum Science & Technology B, vol. B23, no. 4, pp. 1773- 1781, 2005.
6. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed. New York: McGraw Hill, 1975, p.137.