Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 525-528

  Lime, F ^a   Andrieu, F ^b   Derix, J ^a   Ghibaudo, G ^a   Boeuf, F ^c   Skotnicki, T ^c  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; GAIN MEASUREMENT; LOW TEMPERATURE OPERATIONS; SILICON;

COULOMB SCATTERING; MOBILITY GAIN; POCKET IMPLANTS; SHORT CHANNEL DEVICES;

MOSFET DEVICES;

EID: 33751414759     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546700     Document Type: Conference Paper

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