Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects

IEEE Transactions on Electron Devices

Volumn 50, Issue 2, 2003, Pages 278-284

  Bufler, F M ^a   Fichtner, Wolfgang ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Ballistic transport; Monte Carlo methods; MOSFET scaling; Strained silicon; Velocity overshoot

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MONTE CARLO METHODS; SILICON;

DRAIN CURRENT;

MOSFET DEVICES;

EID: 0038733750     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.808552     Document Type: Article

References (37)

1. C. Jungemann and B. Meinerzhagen, "Impact of the velocity overshoot on the performance of NMOSFET's with gate lengths from 80 nm to 250 nm," in Proc. ESSDERC, vol. 29, H. E. Maes, R. P. Mertens, G. Declerck, and H. Grünbacher, Eds., Leuven, Belgium, 1999, pp. 236-239.
2. J. D. Bude, "MOSFET modeling into the ballistic regime," in Proc. SISPAD, Seattle, WA, Sept. 2000, pp. 23-26.
3. K. Ismail, S. F. Nelson, J. O. Chu, and B. S, Meyerson, "Electron transport properties of Si/SiGe heterostructures: measurements and device implications," Appl. Phys. Lett., vol. 63, pp. 660-662, 1993.
4. x substrates," Appl. Phys. Lett., vol. 63, pp. 186-188, 1993.
5. x substrate by Monte Carlo simulation," Appl. Phys. Lett., vol. 62, pp. 2661-2663, 1993.
6. M. V. Fischetti and S. E. Laux, "Band structure, deformation potentials, and carrier mobility in strained Si, Ge and SiGe alloys," J. Appl. Phys., vol. 80, pp. 2234-2252, 1996.
7. x substrates," Appl. Phys. Lett., vol 70, pp. 2144-2146, 1997.
8. J. Welser, J. L. Hoyt, and J. F. Gibbons, "Electron mobility enhancement in stiained-Si n-type metal-oxide-semiconductor field-effect transistors," IEEE Electron Device Lett., vol. 15, pp. 100-102, 1994.
9. J. Welser, J. L. Hoyt, S. Takagi, and J. F. Gibbons, "Strain dependence of the performance enhancement in strained-Si n-MOSFETs," in IEDM Tech. Dig., 1994, pp. 373-376.
10. x formed by ion implantation of Ge," Appl. Phys. Lett., vol. 74, pp. 2076-2078, 1999.
11. x buffer layer on mobility enhancement in a strained-Si n-channel metal-oxide-semiconductor field-effect transistor," Appl. Phys. Lett., vol. 75, pp. 2948-2950, 1999.
12. A. Sadek and K. Ismail, "Si/SiGe CMOS possibilities," Solid-State Electron., vol. 38, pp. 1731-1734, 1995.
13. K. Rim, S. Koester, M. Hargrove, J. Chu, P. M. Mooney, J. Ott, T. Kanarsky, P. Ronsheim, M. Ieong, A. Grill, and H.-S. P. Wong, "Strained Si NMOSFET's for high performance CMOS technology," in Proc. Symp. VLSI Tech., Kyoto, Japan, June 2001, pp. 59-60.
14. x heterostructures: electron transport and field-effect transistor operation using Monte Carlo simulation," J. Appl. Phys., vol. 82, pp. 3911-3916, 1997.
15. x-based MOSFET's by self-consistent Monte Carlo simulation," Phys. Stat. Sol. B, vol. 204, pp. 531-533, 1997.
16. S. Keith, F. M. Bufler, and B. Meinerzhagen, "Full band Monte-Carlo device simulation of an 0.1 μm n-channel MOSFET in strained silicon material," in Proceedings of ESSDERC, H. Grünbacher, Ed. Stuttgart, Germany: Editions Frontières, 1997, vol. 27, pp. 200-203.
17. M. S. Lundstrom, "On the mobility versus drain current relation for a nanoscale MOSFET," IEEE Electron Device Lett.,vol. 22, pp. 293-295, 2001.
18. A. Lochtefeid and D. A. Antoniadis, "Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress," IEEE Electron Device Lett., vol. 22, pp. 591-593, 2001.
19. F. M. Bufler, S. Keith, and B. Meinerzhagen, "Anisotropic ballistic in-plane transport of electrons in strained Si," in Proc. SISPAD, Leuven, Belgium, Sept. 1998, pp. 239-242.
20. B. Fischer, A. Full-Band Monte Carlo Charge Transport Model for Nanoscale Silicon Devices Including Strain. Aachen, Germany: Shaker Verlag, 2000.
21. F. M. Bufler, A. Schenk, and W. Fichtner, "Efficient Monte Carlo device modeling," IEEE Trans. Electron Devices, vol. 47, pp. 1891-1897, 2000.
22. _, "Proof of a simple time-step propagation scheme for Monte Carlo simulation," in Mathematics and Computers in Simulation, 2003, vol. 62, pp. 323-326.
23. F. M. Bufler, C. Zechner, A. Schenk, and W. Fichtner, "Self-consistent single-particle simulation," in Proc. SISPAD, Kobe, Japan, Sept. 2002, pp. 159-162.
24. _, "Single-particle approach to self-consistent Monte Carlo device simulation," IEICE Trans. Electron., vol. E86-C, pp. 308-313, 2003.
25. F. M. Bufler, Y. Asahi, H. Yoshimura, C. Zechner, A. Schenk, and W. Fichtner, "Monte Carlo simulation and measurement of nanoscale n-MOSFETs," IEEE Trans. Electron Devices, vol. 50, pp. 418-424, Feb. 2003.
26. y substrates," Phys. Rev. B, vol. 48, pp. 14276-14287, 1993.
27. C. Jacoboni and L. Reggiani, "The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials," Rev. Mod. Phys., vol. 55, pp. 645-705, 1983.
28. E. Sangiorgi and M. R. Pinto, "A semi-empirical model of surface scattering for Monte Carlo simulation of silicon n-MOSFET's," IEEE Trans. Electron Devices, vol. 39, pp. 356-361, 1992.
29. P. M. Solomon and S. E. Laux, "The ballistic FET: design, capacitance and speed limit," in IEDM Tech. Dig., 2001, pp. 95-98.
30. A. Wettstein, A. Schenk, A. Scholze, G. Garretón, and W. Fichtner, "Charge carrier quantization effects in double-gated SOI MOSFETs," in ULSI Science and Technology, H. Z. Massoud, H. Iwai, C. Claeys, and R. B. Fair, Eds. Pennington. NJ: Electrochem. Soc., 1997, pp. 613-622.
31. A. Wettstein, Quantum Effects in MOS Devices. Konstanz, Germany: Hartung-Gorre Verlag, 2000.
32. F. Venturi, R. K. Smith, E. C. Sangiorgi, M. R. Pinto, and B. Riccó, "A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFET's," IEEE Trans. Computer-Aided Design, vol. 8, pp. 360-369, 1989.
33. P. Houlet, Y. Awano, and N. Yokoyama, "Influence of nonlinear effects on very short pMOSFET device performances," Physica B, vol. 272, pp. 572-574, 1999.
34. C. G. V. de Walle, "Band lineups and deformation potentials in the model-solid theory," Phys. Rev. B, vol. 39, pp. 1871-1883, 1989.
35. C. Canali, G. Ottaviani, and A. Alberigi-Quaranta, "Drift velocity of electrons and holes and associated anisotropic effects in silicon," J. Phys. Chem. Solids, vol. 32, pp. 1707-1720, 1971.
36. y substrates," J. Appl. Phys., vol. 84, pp. 5597-5602, 1998.
37. M. Lundstrom, "Elementary scattering theory of the Si MOSFET," IEEE Electron Device Lett., vol. 18, pp. 361-363, 1997.