Ge/Si nanowire heterostructures as high-performance field-effect transistors

Nature

Volumn 441, Issue 7092, 2006, Pages 489-493

  Xiang, Jie ^a   Lu, Wei ^a   Hu, Yongjie ^a   Wu, Yue ^a   Yan, Hao ^a   Lieber, Charles M ^a,b  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; ELECTRONIC STRUCTURE; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR MATERIALS;

GATE COUPLING; NANOWIRES; QUANTUM CONFINEMENT EFFECTS;

HETEROJUNCTIONS;

BIOMATERIAL; CARBON NANOTUBE; GERMANIUM; NANOTUBE; SILICON; NANOMATERIAL;

ELECTRONIC EQUIPMENT; GEOMETRY; GERMANIUM; NANOTECHNOLOGY; SCATTERING; SILICON;

ARTICLE; DIELECTRIC CONSTANT; ELECTRON; ELECTRONICS; GEOMETRY; NANOTECHNOLOGY; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR; CHEMISTRY; COMPARATIVE STUDY;

GERMANIUM; NANOSTRUCTURES; NANOTUBES, CARBON; SILICON; TRANSISTORS;

EID: 33745327664     PISSN: 00280836     EISSN: 14764687     Source Type: Journal    
DOI: 10.1038/nature04796     Document Type: Article

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