Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 28-29

  Ouyang, Qiqing ^a   Yang, Min ^a   Holt, Judson ^b   Panda, Siddhartha ^b   Chen, Huajie ^b   Utomo, Henry ^b   Fischetti, Massimo ^a   Rovedo, Nivo ^b   Li, Jinghong ^b   Klymko, Nancy ^b   Wildman, Horatio ^b   Kanarsky, Thomas ^b   Costrini, Greg ^b   Fried, David M ^b   Bryant, Andres ^b   Ott, John A ^a   Ieong, Meikei ^a   Sung, Chun Yung ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYBRID ORIENTATION SUBSTRATES; RING OSCILLATORS; SIGE SOURCE/DRAIN;

CONTROL SYSTEMS; EMBEDDED SYSTEMS; FIELD EFFECT TRANSISTORS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING SILICON COMPOUNDS; TENSILE STRESS;

CMOS INTEGRATED CIRCUITS;

EID: 27744459165     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469199     Document Type: Conference Paper

References (7)

1. M. Yang, et al., IEDM Tech. Dig.., p. 453, 2003
2. M. Yang, et al., Symp. on VLSI Tech., p. 160, 2004.
3. T. Ghani, et al., IEDM Tech. Dig.., p. 978, 2003.
4. K. Mistry, et al., Symp. on VLSI Tech., p. 50, 2004.
5. A. Shimizu, et al., IEDM Tech. Dig.., p. 433, 2001.
6. J. Tsang, et al., J. Appl. Phys.,vol. 75, p.8098, 1994.
7. M. Fischetti, et al., J. Appl. Phys., vol. 94, p. 1079, 2003.