Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 80, Issue 3, 1996, Pages 1567-1577

  Takagi, Shin Ichi ^a,b   Hoyt, Judy L ^a   Welser, Jeffrey J ^a   Gibbons, James F ^a  

^a STANFORD UNIVERSITY   (United States)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000741169     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362953     Document Type: Article

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