Analytical model for quantization on strained and unstrained bulk nMOSFET and its impact on quasi-ballistic current

Solid-State Electronics

Volumn 50, Issue 1, 2006, Pages 69-77

  Ferrier, M ^a,b   Clerc, R ^a   Ghibaudo, G ^a   Boeuf, F ^b   Skotnicki, T ^b  

^a IMEP LAHC   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Analytical model; Ballistic; Bulk nMOSFET; Quantization; Quasi ballistic; Strained

Indexed keywords

CONTROL NONLINEARITIES; DIFFERENTIAL EQUATIONS; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; MATHEMATICAL MODELS; POISSON DISTRIBUTION;

ANALYTICAL MODEL; BALLISTIC; BULK NMOSFET; QUANTIZATION; QUASI-BALLISTIC; STRAINED;

MOS DEVICES;

EID: 30344442829     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.10.044     Document Type: Conference Paper

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