On the mobility versus drain current relation for a nanoscale MOSFET

IEEE Electron Device Letters

Volumn 22, Issue 6, 2001, Pages 293-295

  Lundstrom, Mark S ^a,b  

^a IEEE   (United States)

^b Purdue University   (United States)

Author keywords

Ballistic transport; Charge carrier mobility; MOSFET; MOSFET scaling; Velocity overshoot

Indexed keywords

DRAIN CURRENTS;

BACKSCATTERING; CARRIER MOBILITY; COMPUTER SIMULATION; MATHEMATICAL MODELS; MONTE CARLO METHODS;

MOSFET DEVICES;

EID: 0035364878     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.924846     Document Type: Article

References (18)

1. Monte Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300K
2. Silicon transconductance scaling in the overshoot regime
3. Simulating quasi-ballistic transport in Si nanotransistors
4. Elementary scattering theory of the MOSFET
5. Fabrication and analysis of deep submicron strained-Si N-MOSFETs
6. Simulation of nanoscale MOSFETs: A scattering theory interpretation
7. Performance limits of silicon MOSFETS: A theoretical study
8. Ballistic metal-oxide-semiconductor field effect transistor
9. The Bethe condition for thermionic emission near an absorbing boundary
10. Performance limits of Si MOSFETs
11. On experimental determination of carrier velocity in deeply scaled NMOS: How close to the thermal limit?
12. A comparison of semiconductor devices for high-speed logic
13. A total resistance slope-based effective channel mobility extraction method for deep submicron CMOS technology
14. Nonstationary electron/hole transport in sub-0.1-mm MOS devices: Correlation with mobility and low power CMOS application