Mobility enhancement in strained Si NMOSFETs with HfO2 gate dielectrics

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2002, Pages 12-13

  Rim, K ^a   Gusev, E P ^a   D'Emic, C ^a   Kanarsky, T ^a   Chen, H ^a   Chu, J ^a   Ott, J ^a   Chan, K ^a   Boyd, D ^a   Mazzeo, V ^a   Lee, B H ^a   Mocuta, A ^a   Welser, J ^a   Cohen, S L ^a   Ieong, M ^a   Wong, H S ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRON MOBILITY; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON;

GATE DIELECTRICS;

MOSFET DEVICES;

EID: 0036053243     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)