35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 48-49

  Chidambaram, P R ^c   Smith, B A ^c   Hall, L H ^c   Bu, H ^c   Chakravarthi, S ^c   Kim, Y ^a   Samoilov, A V ^a   Kim, A T ^c   Jones, P J ^c   Irwin, R B ^c   Kim, M J ^b   Rotondaro, A L P ^c   Machala, C F ^c   Grider, D T ^c  

^a APPLIED MATERIALS INC   (United States)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; LATTICE CONSTANTS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; STRESSES; TRANSMISSION ELECTRON MICROSCOPY;

CHANNEL MOBILITY; DRAIN EXTENSIONS; LATTICE PARAMETER EXTRACTIONS; SOURCE DRAIN (SD) REGIONS;

GATES (TRANSISTOR);

EID: 4544284412     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.2004.1345386     Document Type: Conference Paper

References (2)

1. T. Ghani et. al. IEDM Digest 2003 p. 978.
2. B. Hornung et al. VLSI Symp. Proceedings 2003 p. 85.