Strain compensated In1-xGaxAs(x<0.47) quantum well photodiodes for extended wavelength operation

Applied Physics Letters

Volumn 73, Issue 16, 1998, Pages 2263-2265

  Dries, J Christopher ^a   Gokhale, Milind R ^a   Thomson, K John ^a   Forrest, Stephen R ^a   Hull, Robert ^b  

^a Princeton University   (United States)

^b University of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CURRENTS; NUMERICAL METHODS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; STRAIN; TENSILE STRESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CRYSTAL QUALITY; INDIUM GALLIUM ARSENIDE; STRAIN COMPENSATION;

PHOTODIODES;

EID: 0032547623     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121696     Document Type: Article

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