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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 4, 1999, Pages 1424-1429

Relaxation of strained Si layers grown on SiGe buffers

(1) Samavedam, S B a

a MOTOROLA INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644452458 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.590771 Document Type: Article

Times cited : (75)

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