Essential physics of carrier transport in nanoscale MOSFETs

IEEE Transactions on Electron Devices

Volumn 49, Issue 1, 2002, Pages 133-141

  Lundstrom, Mark ^a,b   Ren, Zhibin ^b  

^a IEEE   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

Charge carrier processes; MOSFETs; Semiconductor device modeling; Semiconductor devices; Transistors

Indexed keywords

CARRIER TRANSPORT; FINITE DENSITY OF STATE; POLYSILICON DEPLETION; QUANTUM MECHANICAL CONFINEMENT; THERMAL INJECTION;

CAPACITANCE; CARRIER MOBILITY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; ELECTROSTATICS; GATES (TRANSISTOR); OXIDES; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS;

MOSFET DEVICES;

EID: 0036253371     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974760     Document Type: Article

References (33)

1. Monte Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K
2. Silicon transconductance scaling in the overshoot regime
3. Efficient full-band Monte Carlo simulation of silicon devices
4. Elementary scattering theory of the MOSFET
5. The Si MOSFET from a transmission viewpoint
6. Modeling of 10-nm-scale ballistic MOSFETs
7. The ballistic nanotransistor: A simulation study
8. Alternative approach to the solution of added carrier transport problems in semiconductors
9. Diffusion and drift of minority carrier in semiconductors for comparable capture and scattering mean free paths
10. A comparison of semiconductor devices for high-speed logic
11. The insulated-gate field-effect transistor-a bipolar transistor in disguise
12. The Bethe condition for thermionic emission near an absorbing boundary
13. MOSFET modeling in the ballistic regime
14. Toward a compact scattering model for nanoscale MOSFETs
15. Nanoscale device modeling: The Green's function method
16. nanoMOS 2.0
17. Performance limits of Si MOSFETs
18. The ballistic nanotransistor
19. Ballistic metal-oxide-semiconductor field effect transistor
20. On the performance limits for Si MOSFETs: A theoretical study
21. A study of deep-submicron MOSFET scaling based on experiment and simulation
22. Monte Carlo calculation of electron transport in solids
23. Rigorous technique to couple Monte Carlo and drift-diffusion models for computationally efficient device simulation
24. Formulation of the Boltzmann equation in terms of scattering matrices
25. Scaling limit of the MOS transistor-a ballistic MOSFET
26. Essential physics of carrier transport in nanoscale MOSFETs