Six-band k·p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness

Journal of Applied Physics

Volumn 94, Issue 2, 2003, Pages 1079-1095

  Fischetti, M V ^a   Ren, Z ^b   Solomon, P M ^a   Yang, M ^a   Rim, K ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Microelectronics Division   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRENGTH; CRYSTAL ORIENTATION; HOLE MOBILITY; STRAIN;

SURFACE ORIENTATION;

SILICON;

EID: 0043269756     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1585120     Document Type: Review

References (80)

1. R. Oberhuber, G. Zandler, and P. Vogl, Phys. Rev. B 58, 9941 (1998).
2. M. V. Fischetti and S. E. Laux, IEEE Trans. Electron Devices ED-38, 650 (1991).
3. J. M. Luttinger and W. Kohn, Phys. Rev. 97, 869 (1955).
4. G. Dresselhaus, A. F. Kip, and C. Kittel, Phys. Rev. 98, 368 (1955).
5. J. M. Luttinger, Phys. Rev. 102, 1030 (1956).
6. H. Nakatsuji, Y. Kamakura, and K. Taniguchi, Tech. Dig. - Int. Electron Devices Meet. 2002, 727.
7. D. Colman, R. T. Bate, and J. P. Mize, J. Appl. Phys. 39, 1923 (1968).
8. G. Dorda, H. Friedrich, and E. Preuss, J. Vac. Sci. Technol. 9, 759 (1972).
9. L. M. Falikov and N. Garcia, Solid State Commun. 17, 473 (1975).
10. E. Bangert, K. von Klitzing, and G. Landwehr, in Proceedings of the 12th International Conference Physics of Semiconductors, Stuttgart, edited by M. H. Pilkuhn (Teubner, Stuttgart, 1974), p. 714.
11. E. Bangert and G. Landwehr, Surf. Sci. 58, 138 (1976).
12. G. Landwehr, in Festkörperprobleme (Advances in Solid State Physics), edited by H. J. Queisser (Pergamon, Braunschweig, 1975), Vol. XV, p. 49.
13. F. J. Ohkawa and Y. Uemura, Prog. Theor. Phys. 5, 164 (1975).
14. Y. Uemura, Surf. Sci. 58, 138 (1976).
15. C. Y. P. Chao and S. L. Chuang, Phys. Rev. B 46, 4110 (1992).
16. B. A. Foreman, Phys. Rev. B 48, 4964 (1993).
17. Y. X. Liu, D. Z. Ting, and T. C. McGill, Phys. Rev. B 54, 5675 (1996).
18. L.-H. Peng, J. Appl. Phys. 82, 5711 (1997).
19. E. P. Pokatilov, V. A. Fonoberov, V. M. Fomin, and J. T. Devreese, Phys. Rev. B 64, 245328 (2001).
20. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Wiley, New York, 1974).
21. J. M. Hinckley and J. Singh, Phys. Rev. B 41, 2912 (1990).
22. J. M. Hinckley and J. Singh, J. Appl. Phys. 76, 4192 (1994).
23. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80, 2234 (1996).
24. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
25. C. Moglestue, J. Appl. Phys. 59, 3175 (1986).
26. M. V. Fischetti and S. E. Laux, Phys. Rev. B 48, 2244 (1993).
27. M. V. Fischetti, F. Gámiz, and W. Hänsch, J. Appl. Phys. 92, 7320 (2002).
28. max = π/4, π/2, and π/3 for the (001), (011), and (111) surfaces, respectively.
29. J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B 14, 556 (1976).
30. M. M. Rieger and P. Vogl, Phys. Rev. B 48, 14276 (1993).
31. M. V. Fischetti, J. Appl. Phys. 89, 1232 (2001).
32. B. Laikhtman and R. A. Kiehl, Phys. Rev. B 47, 10515 (1993).
33. Z. Ikonic, P. Harrison, and R. W. Kelsall, Phys. Rev. B 64, 245311 (2001).
34. P. Lawaetz, Phys. Rev. 174, 867 (1968); 183, 730 (1969).
35. P. Lawaetz, Phys. Rev. 174, 867 (1968); 183, 730 (1969).
36. J. D. Wiley, Solid State Commun. 8, 1865 (1970).
37. M. Costato and L. Reggiani, Lett. Nuovo Cimento 4, 848 (1970); Phys. Status Solidi B 58, 471 (1973).
38. M. Costato and L. Reggiani, Lett. Nuovo Cimento 4, 848 (1970); Phys. Status Solidi B 58, 471 (1973).
39. K. Takeda, A. Taguchi, and M. Sakata, J. Phys. C 16, 2237 (1983).
40. F. L. Madarasz and F. Szmulowicz, Phys. Rev. B 26, 2101 (1981).
41. H. Ehrenreich and A. W. Overhauser, Phys. Rev. 104, 331 (1956).
42. R. E. Prange and T.-W. Nee, Phys. Rev. 168, 779 (1968).
43. M. Saitoh, J. Phys. Soc. Jpn. 42, 201 (1977).
44. T. Ando, J. Phys. Soc. Jpn. 43, 1616 (1977).
45. Z. Ren, P. M. Solomon, T. Kanarsky, B. Doris, O. Dokumaci, P. Oldiges, R. A. Roy, E. C. Jones, M. Ieong, R. J. Miller, W. Hänsch, and H.-S. Wong, Tech. Dig. - Int. Electron Devices Meet. 2002, 51.
46. M. J. Kearney and A. I. Horrell, Semicond. Sci. Technol. 13, 174 (1998).
47. A. Gold, Solid State Commun. 60, 531 (1986); Phys. Rev. B 35, 723 (1987).
48. A. Gold, Solid State Commun. 60, 531 (1986); Phys. Rev. B 35, 723 (1987).
49. H. Sakaki, T. Noda, K. Hirakawa, M. Tanaka, and T. Matsusue, Appl. Phys. Lett. 51, 1934 (1987).
50. F. Gámiz, J. B. Roldán, J. A. López-Villanueva, P. Cartujo-Cassinello, and J. E. Carceller, J. Appl. Phys. 86, 6854 (1999).
51. F. Gámiz, J. B. Roldán, P. Cartujo-Cassinello, J. A. López-Villanueva, and P. Cartujo, J. Appl. Phys. 89, 1764 (2001).
52. F. Gámiz and M. V. Fischetti, J. Appl. Phys. 89, 5478 (2001).
53. C.-Y. Mou and T.-M. Hong, Phys. Rev. B 61, 12612 (2000).
54. S. M. Goodnick, D. K. Ferry, C. W. Wilmsen, Z. Lilienal, D. Fathy, and O. L. Krivanek, Phys. Rev. B 32, 8171 (1985).
55. T. Ishihara, K. Matsuzawa, M. Takayanagi, and S. Takagi, Jpn. J. Appl. Phys., Part 1 41, 2353 (2001).
56. D. R. Leadley, M. J. Kearney, A. I. Horrell, H. Fischer, L. Risch, E. H. C. Parker, and T. E. Whall, Semicond. Sci. Technol. 17, 708 (2002).
57. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices 41, 2357 (1994).
58. M. Yang, E. Gusev, M. Ieong, O. Glushenkov, D. C. Boyd, K. K. Chan, P. M. Kozlowski, C. P. D'Emic, R. M. Sicina, P. C. Jamison, and A. I. Chou, IEEE Electron. Device Lett. (submitted).
59. T. Satô, Y. Takeishi, and H. Hara, Jpn. J. Appl. Phys. 8, 588 (1969).
60. T. Satô, Y. Takeishi, H. Hara, and Y. Okamoto, Phys. Rev. B 4, 1950 (1971).
61. M. Kinugawa, M. Kakumu, T. Usami, and J. Matsunaga, Tech. Dig. - Int. Electron Devices Meet. 1985, 581.
62. T. Matsumoto, S. Maeda, H. Dang, T. Uchida, K. Ota, Y. Hirano, S. Sayama, T. Iwamatsu, T. Ipposhi, H. Oda, S. Maegawa, Y. Inoue, and T. Nishimura, Tech. Dig. - Int. Electron Devices Meet. 2001, 663.
63. F. Schäffler, Semicond. Sci. Technol. 12, 1515 (1997).
64. T. Tezuka, N. Sugiyama, S. Takagi, and A. Kurobe, in Proceedings of the 25th International Conference on the Physics of Semiconductors, Osaka 2000, edited by N. Miura and T. Ando (Springer-Verlag, Berlin, 2001), p. 1753.
65. T. Mizuno, N. Sugiyama, H. Satake, and S. Takagi, 2000 Symposium on VLSI Technology Digest (IEEE, Piscataway, NJ, 2000), p. 210.
66. T. Mizuno, S. Takagi, N. Sugiyama, H. Satake, A. Kurobe, and A. Toriumi, IEEE Electron Device Lett. 21, 230 (2000).
67. T. Mizuno, N. Sugiyama, A. Kurobe, and S. Takagi, IEEE Trans. Electron Devices 48, 1612 (2001).
68. N. Sugii, D. Hisamoto, K. Washio, N. Yokoyama, and S. Kimura, Tech. Dig. - Int. Electron Devices Meet. 2001, 33.
69. C. W. Leitz, M. T. Currie, M. L. Lee, Z.-Y Cheng, D. A. Antoniadis, and E. A. Fitzgerald, J. Appl. Phys. 92, 3745 (2002).
70. K. Rim, J. Chu, K. A. Jenkins, T. Kanarsky, K. Lee, A. Mocuta, H. Zhu, R. Roy, J. Newbury, J. Ott, K. Petrarca, P. Mooney, D. Lacey, S. Koester, K. Chan, D. Boyd, M. Ieong, and H. S. Wong, 2002 Symposium on VLSI Technology Digest (IEEE, Piscataway, NJ, 2002), p. 98.
71. L. Huang, J. O. Chu, S. A. Goma, C. P. D'Emic, S. J. Koester, D. F. Canaperi, P. M. Mooney, S. A. Cordes, J. L. Speidell, R. M. Anderson, and H. S. Wong, IEEE Trans. Electron Devices 49, 1566 (2002).
72. A. T. Bradley, R. C. Jaeger, J. C. Suhling, and K. J. O'Connor, IEEE Trans. Electron Devices 48, 2009 (2001).
73. P. Kleinmann, B. Semmache, M. Le Berre, and D. Barbier, Phys. Rev. B 57, 8966 (1998).
74. C. S. Smith, Phys. Rev. 94, 42 (1954).
75. C.-L. Huang, H. R. Soleimani, G. J. Grula, J. W. Sleight, A. Villani, H. Ali, and D. A. Antoniadis, IEEE Trans. Electron Devices 44, 646 (1997).
76. J.-W. Lee, H.-K. Kim, J.-W. Yang, W.-C. Lee, J.-H. Oh, M.-R. Oh, and Y.-H. Koh, IEEE Electron Device Lett. 20, 176 (1999).
77. D. Esseni, M. Mastrapasqua, G. K. Celler, C. Fiegna, L. Selmi, and E. Sangiorgi, IEEE Trans. Electron Devices 48, 2842 (2001).
78. K. Uchida, H. Watanabe, A. Kinoshita, J. Koga, T. Numata, and S. Takagi, Tech. Dig. - Int. Electron Devices Meet. 2002, 47.
79. H. Iwata, J. Appl. Phys. 90, 866 (2001).
80. S. H. Olsen, A. G. O'Neill, D. J. Morris, A. G. Cullis, N. J. Woods, J. Zhang, K. Fobelets, and H. A. Kemhadjian, Semicond, Sci. Technol. 17, 655 (2002).