Enhanced intrinsic gain (gm/gd) of PMOSFETs with a Si0.7Ge0.3 channel

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 175-178

  Lindgren, A C ^a   Hellberg, P E ^a   Von Haartman, M ^a   Wu, D ^a   Menon, C ^a   Zhang, S L ^a   Ostling M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; MOSFET DEVICES;

EFFECTIVE MOBILITIES; GATE LENGTH; OUTPUT CONDUCTANCE; P-MOSFETS; PMOSFET;

SILICON;

EID: 84907692854     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194898     Document Type: Conference Paper

References (12)

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