Strained-Si-on-insulator (strained-SOI) MOSFETs - Concept, structures and device characteristics

IEICE Transactions on Electronics

Volumn E84-C, Issue 8, 2001, Pages 1043-1050

  Takagi, S ^a   Mizuno, T ^a   Sugiyama, N ^a   Tezuka, T ^a   Kurobe, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

CMOS; Mobility; SiGe; SOI; Strain

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POWER SUPPLIES TO APPARATUS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR GROWTH; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

HIGH CURRENT DRIVE; HIGH MOBILITY CHANNEL; STRAINED SILICON ON INSULATOR; ULTRA THIN SILICON GERMANIUM-ON-INSULATOR;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035418872     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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