Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 129-132

  Uchida, Ken ^a,b   Krishnamohan, Tejas ^a   Saraswat, Krishna C ^a   Nishi, Yoshio ^a  

^a Stanford University   (United States)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND EDGE; ENERGY SURFACE; UNIAXIAL STRESS ENGINEERING;

BAND STRUCTURE; MOSFET DEVICES; STRESSES;

ELECTRON MOBILITY;

EID: 33847697736     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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