Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistors

Applied Physics Letters

Volumn 69, Issue 9, 1996, Pages 1229-1231

  Fan, Zhifang ^a   Mohammad, S N ^a   Aktas, O ^a   Botchkarev, A E ^a   Salvador, A ^a   Morkoç, Hadis ^a,b  

^a University of Illinois at Urbana Champaign   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001033893     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117420     Document Type: Article

References (11)

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3. O. Aktas, W. Kim, Z. Fan, A. Botchkarev, A. Salvador, S. N. Mohammad, B. Sverdlov, and H. Morkoç, Electron. Lett. See also, O. Aktas, W. Kim, Z. Fan, A. Botchkarev, A. Salvador, S. N. Mohammad, B. Sverdlov, and H. Morkoç, Technical Digest of the International Electron Devices Meeting (Institution of Electrical and Electronics Engineers, Piscataway, NJ, 1995), p. 205.
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10. S. Binari, L. B. Rowland, G. Kelner, W. Kruppa, H. B. Dietrich, K. Doverspike, and D. K. Gaskill, International Symposium of Compound Semiconductor Proceedings, San Diego, 1994 (unpublished).
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