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Volumn 71, Issue 25, 1997, Pages 3631-3633

High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001449046     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120463     Document Type: Article
Times cited : (169)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.